IRLML6402TRPBF Overview
The IRLML6402TRPBF is a P-channel MOSFET designed for high-efficiency switching and load management in compact electronics. With its low on-resistance and robust current handling, it is well-suited for use in power management, DC-DC conversion, and load switching applications. Its SOT-23 package supports space-constrained designs, while the logic-level gate drive enables direct interfacing with low-voltage microcontrollers. For engineers and sourcing professionals seeking reliable, efficient discrete power MOSFET solutions, the IRLML6402TRPBF delivers proven performance and ease of integration. For more detailed component sourcing, visit IC Manufacturer.
IRLML6402TRPBF Technical Specifications
| Parameter | Details |
|---|---|
| Transistor Type | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | -20 V |
| Continuous Drain Current (ID) | -3.7 A |
| Gate-Source Voltage (VGS) | ?I12 V |
| RDS(on) (at VGS = -4.5V) | 0.055 ?? |
| Package / Case | SOT-23 (Surface Mount) |
| Operating Temperature Range | -55??C to +150??C |
| Mounting Type | Surface Mount |
| Polarity | P-Channel |
IRLML6402TRPBF Key Features
- Low RDS(on) ensures minimal conduction losses, contributing to efficient power management in compact circuits.
- Logic-level gate drive compatibility allows direct interfacing with standard logic and microcontroller outputs, simplifying circuit design and reducing external component requirements.
- Surface-mount SOT-23 package enables high-density PCB layouts, supporting miniaturized end products without sacrificing performance or reliability.
- Wide operating temperature range and robust current handling make it suitable for demanding industrial and consumer applications.
IRLML6402TRPBF Advantages vs Typical Alternatives
Compared to standard P-channel MOSFETs, this device offers lower on-resistance and logic-level gate drive, resulting in improved switching efficiency and easier integration with low-voltage control logic. The SOT-23 surface-mount footprint supports miniaturization, while the robust current capability enhances reliability in high-performance circuits. These related function words underscore its value in modern electronic designs.
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Typical Applications
- Power Management: Utilized for high-efficiency load switching or power distribution in portable and battery-powered devices, maximizing energy savings and extending battery life.
- DC-DC Converters: Ideal for synchronous rectification or switching roles in low-voltage step-down or step-up converters where compactness and efficiency are critical.
- Load Switching: Suitable for controlling power to subsystems in consumer electronics, automotive modules, or IoT devices.
- Reverse Battery Protection: Employed in circuits to guard against incorrect polarity connection damage, leveraging low RDS(on) for minimal voltage drop and heat dissipation.
IRLML6402TRPBF Brand Info
The IRLML6402TRPBF is part of a trusted discrete MOSFET portfolio recognized for quality and application reliability. It is widely adopted in the electronics industry due to its combination of compact SOT-23 packaging, logic-level gate drive, and robust electrical characteristics. This product addresses the requirements of engineers seeking efficient, reliable switching and load management solutions for both industrial and consumer-focused electronics.
FAQ
What is the maximum drain-source voltage supported by this P-channel MOSFET?
The device supports a maximum drain-source voltage of -20 V, making it suitable for low-voltage power switching tasks in various electronic applications, including portable devices and industrial modules.
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Can this MOSFET be directly driven by logic-level signals?
Yes, it is compatible with logic-level gate drive, meaning it can be controlled directly by microcontrollers or standard logic circuits without the need for additional level-shifting components, simplifying design efforts.
What are the advantages of using the SOT-23 package for this MOSFET?
The SOT-23 surface-mount package enables high component density, supports automated assembly, and contributes to space savings on densely populated printed circuit boards, which is important for modern compact devices.
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In what temperature range can this device operate reliably?
The MOSFET is rated for operation from -55??C to +150??C, ensuring reliable performance across a wide range of environmental and industrial conditions, including both consumer and automotive sectors.
Is this MOSFET suitable for battery-powered circuits?
Absolutely. Its low on-resistance and efficient switching characteristics make it an excellent choice for battery-powered designs, helping to reduce power loss, extend battery life, and minimize heat generation.
