IKQB160N75CP2AKSA1 Overview
The IKQB160N75CP2AKSA1 is a high-performance N-channel power MOSFET engineered for demanding industrial and commercial applications requiring efficient switching and robust power handling. Designed for low conduction losses and enhanced energy efficiency, this device is optimized for both high-speed switching and thermal stability. Its compact TO-247-3 package ensures ease of integration into power circuits, while the advanced silicon technology supports superior ruggedness and reliability. Suitable for engineers and sourcing professionals, the device delivers a compelling balance of performance and cost-effectiveness. For more details and sourcing options, visit IC Manufacturer.
IKQB160N75CP2AKSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Drain to Source Voltage (VDS) | 75 V |
| Continuous Drain Current (ID) | 160 A |
| RDS(on) (Max) | 2.4 m?? |
| Gate Charge (Qg) | 260 nC |
| Power Dissipation (PD) | 625 W |
| Package | TO-247-3 |
| Polarity | N-Channel |
| Operating Temperature Range | -55??C to +175??C |
IKQB160N75CP2AKSA1 Key Features
- Low RDS(on) of 2.4 m?? enables minimal conduction losses, which significantly improves overall system efficiency in high-current applications.
- High continuous drain current rating of 160 A supports demanding load profiles, making it ideal for industrial and power conversion systems.
- Robust TO-247-3 package provides excellent thermal performance and mechanical durability, enhancing reliability in harsh operating environments.
- Wide operating temperature range from -55??C to +175??C ensures stable performance across diverse application conditions.
IKQB160N75CP2AKSA1 Advantages vs Typical Alternatives
With its ultra-low RDS(on) and high drain current capability, this device offers greater energy efficiency and thermal stability compared to standard MOSFETs in similar voltage classes. The robust TO-247-3 packaging and broad operating temperature range ensure reliable operation and simplified thermal management, making it an optimal choice for high-power and high-frequency switching tasks.
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Typical Applications
- Switching power supplies: The device’s low on-resistance and high current capacity make it ideal for high-efficiency power supply designs, improving energy savings and thermal performance.
- Motor control circuits: Its high current handling and fast switching characteristics support precision and responsiveness in industrial and commercial motor drive applications.
- DC-DC converters: The combination of low gate charge and high power dissipation enhances conversion efficiency and supports compact, reliable converter designs.
- Uninterruptible power supplies (UPS): The high reliability and strong thermal characteristics suit critical power backup systems that demand robust and continuous operation.
IKQB160N75CP2AKSA1 Brand Info
This product is developed as a part of a leading manufacturer??s advanced power MOSFET portfolio, focusing on high efficiency and reliability for industrial environments. The device is engineered to deliver outstanding electrical performance in a wide range of power management and conversion applications. Its combination of robust construction, industry-standard packaging, and optimized silicon process ensures long-term, dependable operation for engineers and system designers seeking reliable component solutions.
FAQ
What makes the IKQB160N75CP2AKSA1 suitable for high-power applications?
The high continuous drain current rating of 160 A and low RDS(on) value enable the device to handle substantial power loads with minimal losses, making it an excellent choice for demanding power conversion and management scenarios.
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How does the TO-247-3 package benefit thermal performance?
The TO-247-3 package is designed for superior heat dissipation and mechanical strength, ensuring the device maintains stability and reliability even under high-temperature or high-power conditions commonly found in industrial environments.
Can the IKQB160N75CP2AKSA1 operate in extreme temperature conditions?
Yes, the device supports an operating temperature range from -55??C up to +175??C, allowing it to perform reliably in both very low and high ambient temperatures, which is essential for many industrial and outdoor applications.
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Is this MOSFET suitable for fast switching applications?
With a gate charge of 260 nC and optimized switching characteristics, the device is well-suited for fast switching applications, contributing to efficient power conversion and reduced switching losses.
What typical circuit protection or reliability features does this MOSFET offer?
The device??s advanced silicon technology and rugged package provide inherent reliability and durability, reducing the risk of failure in harsh environments and ensuring long-term stable operation in critical power applications.
