IKQ40N120CH3XKSA1 IGBT Transistor 1200V 40A TO-247 Package

  • Designed for high-efficiency switching, this device enables precise control in power electronics circuits.
  • Features a TO-247-3 package, offering a compact footprint that helps reduce overall board space requirements.
  • IKQ40N120CH3XKSA1 is suitable for use in industrial motor drives, supporting reliable operation under demanding conditions.
  • Optimized for efficient thermal performance, minimizing heat buildup and enhancing long-term stability in various applications.
  • Manufactured to stringent quality standards, ensuring consistent performance and dependable operation over time.
SKU: IKQ40N120CH3XKSA1 Category: Brand:
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产品上方询盘

IKQ40N120CH3XKSA1 Overview

The IKQ40N120CH3XKSA1 is a high-performance insulated-gate bipolar transistor (IGBT) designed to meet the rigorous demands of industrial power electronics. With a robust 1200 V voltage rating and advanced trench/field-stop technology, this device delivers efficient switching and excellent reliability in high-voltage, high-current environments. Its TO-247-3 package enhances thermal management for continuous operation in demanding applications. This IGBT is engineered for use in motor drives, inverters, and industrial power conversion, offering a compelling balance of efficiency and durability. For more details, visit IC Manufacturer.

IKQ40N120CH3XKSA1 Technical Specifications

Parameter Value
Product Category IGBT Transistors
Configuration Single
Collector-Emitter Voltage (Vce) 1200 V
Continuous Collector Current (Ic) 80 A
Maximum Gate-Emitter Voltage ?I20 V
Power Dissipation 417 W
Technology Trench/Field Stop
Package/Case TO-247-3
Operating Temperature Range -40??C to +150??C

IKQ40N120CH3XKSA1 Key Features

  • High 1200 V voltage rating ensures suitability for industrial power switching, protecting against voltage spikes and enhancing system robustness.
  • Trench/Field Stop technology minimizes conduction and switching losses, leading to greater energy efficiency in demanding applications.
  • TO-247-3 package offers superior thermal performance, enabling reliable operation under high current loads and simplifying heat dissipation design.
  • ?I20 V maximum gate-emitter voltage provides flexibility in drive circuit design, supporting a wide range of control strategies.

IKQ40N120CH3XKSA1 Advantages vs Typical Alternatives

This IGBT stands out due to its advanced trench/field-stop design, which reduces switching losses and increases efficiency compared to standard planar alternatives. Its high current capacity and robust voltage handling make it ideal for applications requiring reliable, continuous operation. The TO-247-3 package further enhances thermal management, reducing the risk of overheating and improving overall system longevity. These strengths combine to deliver superior performance in industrial power control environments.

Typical Applications

  • Industrial motor drives: The IKQ40N120CH3XKSA1 is well-suited for controlling large electric motors in manufacturing and automation, where high efficiency and robust voltage handling are essential for consistent operation.
  • Power inverters: This device offers reliable high-voltage switching for applications such as renewable energy systems, including solar power inverters and uninterruptible power supplies (UPS).
  • Welding equipment: Its high current capability and rugged construction make it ideal for power conversion in welding machines, ensuring stable arc control and energy efficiency.
  • Switch-mode power supplies: The IGBT’s fast switching and low losses are advantageous for high-frequency converters, supporting compact and efficient power supply designs.

IKQ40N120CH3XKSA1 Brand Info

The IKQ40N120CH3XKSA1 is part of a trusted portfolio of IGBT transistors from a leading manufacturer recognized for innovation in power semiconductor technology. This specific product is engineered to deliver high performance in industrial and energy conversion systems. It combines proven reliability with advanced trench/field-stop architecture, making it a preferred choice for engineers designing next-generation power electronics. The manufacturer??s commitment to quality ensures that each device meets stringent industry standards for consistent, long-term operation.

FAQ

What are the main benefits of using the IKQ40N120CH3XKSA1 in industrial applications?

Its 1200 V voltage rating and 80 A current capability provide robust handling of high-power loads, while advanced trench/field-stop technology ensures efficient switching. This combination delivers enhanced energy efficiency and reliability in demanding environments.

What type of package does this IGBT use and why is it important?

The device is supplied in a TO-247-3 package, which is known for excellent thermal management. This allows for better heat dissipation, enabling the IGBT to operate reliably under continuous high-load conditions typical in industrial systems.

Is the IKQ40N120CH3XKSA1 suitable for inverter applications?

Yes, its high voltage and current ratings, combined with low switching losses, make it well-suited for power inverters in renewable energy, motor drives, and other industrial uses where reliability and efficiency are key concerns.

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产品中间询盘

What is the maximum gate-emitter voltage, and how does it affect design flexibility?

The maximum gate-emitter voltage is ?I20 V, allowing for a range of gate drive voltages. This flexibility helps engineers design control circuits that can optimize switching performance for their specific application requirements.

How does the device??s operating temperature range support industrial reliability?

With an operating temperature range of -40??C to +150??C, this IGBT can function reliably in harsh industrial conditions, accommodating both low-temperature environments and high-heat scenarios without performance degradation.

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