AIKB50N65DH5ATMA1 Power MOSFET 650V 50A TO-247 Infineon Transistor

  • Provides efficient power switching, helping users manage high-voltage control circuits in electronic systems.
  • Features a TO-247 package, which allows for improved heat dissipation and easier mounting on power boards.
  • The compact design enables space savings on printed circuit boards, supporting denser system integration.
  • Well-suited for applications such as motor drives, where consistent power delivery is essential for proper operation.
  • Designed to ensure stable performance over time, minimizing the risk of failures in demanding environments.
SKU: AIKB50N65DH5ATMA1 Category: Brand:
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产品上方询盘

AIKB50N65DH5ATMA1 Overview

The AIKB50N65DH5ATMA1 is a high-performance N-channel MOSFET specifically engineered for industrial and power management applications. Featuring advanced silicon technology, this device delivers efficient switching performance, high voltage tolerance, and robust thermal management. Its design is optimized for demanding environments requiring both reliability and low conduction losses. Sourcing professionals and design engineers benefit from its proven operational stability, making it ideal for use in a wide range of power conversion, switching, and motor control systems. For more details, visit IC Manufacturer.

AIKB50N65DH5ATMA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 650 V
Continuous Drain Current 50 A
RDS(on) (Max) 0.055 ??
Gate Charge (Qg) Typical value, consult datasheet
Package Type TO-247-3
Operating Temperature Range -55??C to +150??C
Polarity Single N-Channel
Mounting Style Through Hole

AIKB50N65DH5ATMA1 Key Features

  • High Voltage Capability: With a maximum drain-source voltage rating of 650 V, this MOSFET is suitable for demanding high-voltage switching environments, supporting safer operation in industrial power systems.
  • Large Continuous Drain Current: Capable of handling up to 50 A, it enables designs with higher load capacities and improved performance for motor drives or power supplies.
  • Low On-Resistance: A maximum RDS(on) of just 0.055 ?? minimizes conduction losses, directly contributing to higher efficiency and reduced heat generation.
  • Robust Thermal Performance: The TO-247-3 package and wide operating temperature range enhance system reliability under challenging conditions.

AIKB50N65DH5ATMA1 Advantages vs Typical Alternatives

Compared to standard power MOSFETs, this device offers superior high-voltage tolerance, minimized on-state resistance, and greater current handling. These attributes combine to deliver higher efficiency, reduced power dissipation, and improved system reliability. The robust TO-247-3 package further contributes to mechanical and thermal durability, making it a strong choice for industrial and power management applications.

Typical Applications

  • Switch Mode Power Supplies (SMPS): The high voltage and current ratings make this MOSFET ideal for SMPS topologies, improving efficiency and reliability in both primary and secondary side switching functions.
  • Motor Drive Circuits: Widely used in industrial motor control solutions, enabling precise and efficient operation in applications such as pumps, conveyors, and HVAC systems.
  • Inverters for Renewable Energy: Suited for photovoltaic inverter stages and wind power converters that demand robust high-voltage switches capable of handling fast transients and high currents.
  • Uninterruptible Power Supplies (UPS): Utilized in battery management, output switching, and inverter stages to ensure stable power delivery and system resilience.

AIKB50N65DH5ATMA1 Brand Info

This device is manufactured by a globally recognized semiconductor supplier, known for delivering reliable and innovative power management solutions. The AIKB50N65DH5ATMA1 exemplifies the brand’s commitment to quality, offering advanced MOSFET technology with optimized electrical characteristics for industrial, automotive, and power conversion markets. The product is built to meet stringent industry standards, ensuring compatibility and long-term support for demanding applications.

FAQ

What are the key performance benefits of using this MOSFET in power conversion applications?

Its combination of high voltage handling, large continuous current capability, and low RDS(on) leads to reduced conduction losses and improved efficiency. This makes it particularly well-suited for high-performance power conversion systems where reliability and minimal energy loss are critical.

How does the TO-247-3 package support thermal management?

The TO-247-3 package offers a large surface area for effective heat dissipation, allowing the device to operate at higher currents without excessive temperature rise. This enhances reliability and extends the operational lifespan, especially in industrial environments.

Is this MOSFET suitable for high-frequency switching?

Yes, its optimized gate charge and low on-resistance allow for efficient high-frequency switching, making it a strong fit for modern SMPS and inverter designs that require fast transitions and reduced switching losses.

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产品中间询盘

What design considerations should be taken for mounting and integration?

As a through-hole device, proper PCB layout is essential for optimal thermal and electrical performance. Adequate heatsinking and trace width are recommended to handle the specified current and minimize voltage drops or heat buildup.

Can this device be used in automotive or renewable energy applications?

Yes, its robust voltage and current ratings, coupled with high reliability, make it suitable for demanding environments such as automotive powertrains or renewable energy inverters, where stable operation under varying loads and temperatures is required.

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