IGB20N65S5ATMA1 Power MOSFET Transistor, TO-220 Package, 650V N-Channel

  • Designed for switching and amplification, this device enables efficient power management in electronic circuits.
  • Features a TO-220 package, which offers straightforward mounting and heat dissipation for thermal stability.
  • Its compact form factor allows for space-saving designs, making it suitable for high-density circuit boards.
  • Commonly used in motor control systems, it supports reliable operation in demanding industrial environments.
  • Manufactured for consistent performance, ensuring stable operation and longevity under varied operating conditions.
SKU: IGB20N65S5ATMA1 Category: Brand:
Infineon logo
产品上方询盘

IGB20N65S5ATMA1 Overview

The IGB20N65S5ATMA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding industrial and power electronics environments. It combines fast switching speed with low conduction losses, making it well-suited for modern energy conversion and motor control applications. With a voltage rating of 650V and a current handling capability of 40A, this device delivers reliable operation even in challenging conditions. Engineers and sourcing specialists seeking robust, energy-efficient solutions will appreciate its compact packaging and superior electrical characteristics. Learn more at IC Manufacturer.

IGB20N65S5ATMA1 Technical Specifications

Parameter Value
Type IGBT (Insulated Gate Bipolar Transistor)
Collector-Emitter Voltage (VCES) 650 V
Continuous Collector Current (IC) 40 A
Configuration Single
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature Range -40??C to 150??C (TJ)
Polarity N-Channel
Number of Pins 3

IGB20N65S5ATMA1 Key Features

  • 650V voltage blocking capability enables safe operation in high-voltage circuits, supporting robust energy conversion systems.
  • 40A collector current rating allows this IGBT to handle substantial loads, ideal for industrial motor drives and inverters.
  • TO-247-3 package ensures excellent thermal performance and straightforward integration onto power PCBs, reducing system complexity.
  • Through-hole mounting improves mechanical stability for applications subject to vibration or high thermal cycling.
  • Wide operating temperature range from -40??C to 150??C delivers reliable functionality in harsh environments.
  • Single N-channel configuration provides efficient switching and simplified gate drive requirements for designers.

IGB20N65S5ATMA1 Advantages vs Typical Alternatives

This IGBT stands out due to its combination of high voltage tolerance, substantial current capacity, and robust TO-247-3 packaging. The device??s efficient conduction and switching characteristics minimize power losses, leading to better energy efficiency compared to standard solutions. Its wide temperature range and durable mounting option ensure high reliability in industrial and power conversion applications, providing superior performance over conventional transistors in demanding scenarios.

Typical Applications

  • Industrial Motor Drives: Used for controlling large motors in automation, robotics, and manufacturing, where precise switching and high efficiency are essential for productivity and energy savings.
  • Power Inverters: Ideal for renewable energy systems and uninterruptible power supplies (UPS), enabling efficient DC-AC power conversion with minimal loss.
  • Switch-Mode Power Supplies (SMPS): Ensures fast, reliable switching to maintain stable voltage output across a wide range of load conditions.
  • Welding Equipment: Suitable for high-current switching applications, delivering consistent performance and reliability in industrial welding machinery.

IGB20N65S5ATMA1 Brand Info

The IGB20N65S5ATMA1 is part of a well-regarded product line known for delivering dependable high-power switching performance. Designed to meet the exacting requirements of industrial engineers and system integrators, this IGBT leverages advanced semiconductor manufacturing to provide a balance of efficiency, reliability, and thermal robustness. Its trusted reputation is built on proven application success in energy conversion, drive control, and power management solutions.

FAQ

What is the primary advantage of using the IGB20N65S5ATMA1 in power electronics designs?

The main advantage is its ability to handle high voltages and currents with efficient switching performance, making it suitable for demanding power electronics applications where reliability and energy efficiency are critical factors.

Is the device suitable for high-temperature industrial environments?

Yes, the wide operating temperature range of -40??C to 150??C ensures reliable operation in harsh industrial settings, providing stable performance even under challenging thermal conditions.

What type of mounting does the device support?

This IGBT utilizes a through-hole mounting style, specifically with the TO-247-3 package, which offers mechanical robustness and effective heat dissipation for high-power applications.

📩 Contact Us

产品中间询盘

Can this component be used in motor drive inverters?

Absolutely. Its 650V blocking voltage and 40A current capability make it well-suited for use in industrial motor drive inverters, where high efficiency and reliability are essential.

What distinguishes the IGB20N65S5ATMA1 from standard transistors?

It combines the fast switching of a MOSFET with the high current and voltage handling of a bipolar transistor, providing lower conduction losses, higher energy efficiency, and greater robustness in demanding power switching roles.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?