IKP08N65F5XKSA1 N-Channel MOSFET Power Transistor, TO-220 Package

  • Designed as a power MOSFET, this device efficiently controls high voltages for switching applications.
  • Features a 650V voltage rating, supporting safe operation in circuits that require robust voltage handling.
  • The TO-220 package allows for straightforward mounting and effective heat dissipation in compact layouts.
  • Suitable for use in power supplies, providing reliable switching and energy management in electronic equipment.
  • Manufactured to meet consistent quality standards, helping ensure stable long-term performance in demanding environments.
SKU: IKP08N65F5XKSA1 Category: Brand:
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IKP08N65F5XKSA1 Overview

The IKP08N65F5XKSA1 is a high-voltage N-channel MOSFET designed to deliver reliable switching and power conversion in demanding industrial and consumer electronics environments. Built to handle continuous currents efficiently, this device offers robust voltage handling, low on-resistance, and optimized gate charge for superior performance in power management applications. Its design enables greater energy efficiency and system reliability, making it a strong choice for power supplies, motor drives, and lighting solutions. For more information, visit IC Manufacturer.

IKP08N65F5XKSA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 650 V
Continuous Drain Current (ID) 8 A
RDS(on) (Max) 0.82 ??
Gate Charge (Qg) 52 nC
Package Type TO-220FP
Polarity N-Channel
Mounting Style Through Hole
Power Dissipation 41 W

IKP08N65F5XKSA1 Key Features

  • High voltage capability (650 V) ensures safe operation in circuits with substantial voltage transients, reducing risk of device failure.
  • Low on-resistance (0.82 ?? max) minimizes conduction losses, improving system energy efficiency and reducing heat generation during operation.
  • Optimized gate charge (52 nC) allows for faster switching speeds, supporting higher frequency operation and efficient power conversion.
  • Robust TO-220FP package provides enhanced thermal management and isolation, ensuring reliable performance under continuous high-load conditions.

IKP08N65F5XKSA1 Advantages vs Typical Alternatives

This device stands out due to its combination of high voltage tolerance, low on-resistance, and efficient gate charge, which deliver better energy efficiency and greater reliability than many standard MOSFETs. The TO-220FP package further enhances safety and thermal performance, making it suitable for robust industrial and consumer applications where dependable operation is crucial.

Typical Applications

  • Switch-mode power supplies (SMPS): The high voltage and current ratings make this MOSFET ideal for primary side switches in switch-mode power supply topologies, improving overall power conversion efficiency.
  • Motor control circuits: Its robust current handling and low RDS(on) support reliable operation in single-phase and three-phase motor drive applications.
  • LED lighting drivers: Suitable for use in high-performance LED drivers that require efficient, high-voltage switching components.
  • Uninterruptible Power Supplies (UPS): Ensures reliable power switching and conversion in backup systems, contributing to system stability and longevity.

IKP08N65F5XKSA1 Brand Info

The IKP08N65F5XKSA1 is offered by a reputable semiconductor manufacturer known for delivering high-quality power management solutions. This MOSFET is engineered with advanced process technology to provide superior performance in high-voltage and high-current environments. The device’s robust construction, industry-standard TO-220FP package, and optimized electrical characteristics reflect a commitment to reliability, efficiency, and compatibility with a wide range of industrial and consumer designs.

FAQ

What makes the IKP08N65F5XKSA1 suitable for high-voltage applications?

With a drain-source voltage rating of 650 V, this MOSFET can safely handle circuits exposed to high voltage conditions, making it a reliable choice for power supplies and motor drives that require robust voltage endurance.

How does the low RDS(on) benefit power management applications?

A low RDS(on) value of 0.82 ?? reduces conduction losses during operation. This directly improves energy efficiency and decreases heat generation, which is important in compact or thermally sensitive designs.

What package type does this MOSFET use and why is it important?

It is provided in a TO-220FP package, which offers enhanced thermal performance and electrical isolation. This package type is widely used in power electronics for its ability to handle higher power dissipation and ease of mounting.

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Can this device be used in switching frequencies typical of modern SMPS designs?

Yes, the optimized gate charge (52 nC) enables fast switching, making it well-suited for the higher frequencies found in modern switch-mode power supply designs. This helps improve conversion efficiency and reduce overall system size.

What are the main industries or segments that benefit from this MOSFET?

Industries such as industrial automation, consumer electronics, lighting, and power backup systems benefit from this device??s combination of high voltage, current capability, and reliable package, supporting robust and efficient designs.

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