IKD04N60RFATMA1 Overview
The IKD04N60RFATMA1 is a robust power MOSFET designed to meet the demanding requirements of industrial, automotive, and high-voltage switching applications. Engineered for efficiency and reliability, this device features advanced silicon technology for optimal performance in power conversion and switching circuits. Its high breakdown voltage and low on-resistance make it suitable for circuits that demand both power handling and precise control. Trusted by professionals, this product delivers solid performance in compact packages. For more technical details and procurement support, please visit the IC Manufacturer site.
IKD04N60RFATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | N-channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 4 A |
| On-Resistance (RDS(on)) | 1.63 ?? |
| Gate Charge (Qg) | 24 nC |
| Maximum Power Dissipation | 83 W |
| Package Type | TO-220FP |
| Operating Temperature Range | -55??C to +150??C |
IKD04N60RFATMA1 Key Features
- High voltage tolerance up to 600 V, enabling reliable use in demanding power switching applications where electrical overstress could be a concern.
- Low RDS(on) of 1.63 ?? reduces conduction losses, improving efficiency in power conversion circuits.
- Fast switching performance, facilitated by a low gate charge of 24 nC, supports higher frequency operation and minimizes switching losses.
- Compact TO-220FP package offers effective thermal management and ease of integration into a wide variety of PCB layouts.
IKD04N60RFATMA1 Advantages vs Typical Alternatives
This N-channel MOSFET stands out from standard alternatives with its combination of high voltage handling, low on-resistance, and efficient switching. The result is improved power density, reduced energy loss, and enhanced reliability, especially in designs where thermal management and switching efficiency are critical. These strengths make it a preferred choice for engineers requiring robust performance and integration flexibility.
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Typical Applications
- Switch mode power supplies (SMPS): The device??s voltage rating and efficiency make it well-suited for primary and secondary side switching in compact power supply designs, where thermal stability and reliability are critical.
- High voltage inverters: Its ability to handle continuous drain current and high breakdown voltage enables robust operation in industrial inverter circuits for motor drives and automation systems.
- LED lighting drives: This MOSFET can be used in constant current regulators and switching circuits for high-power LED luminaires, improving efficiency and lifespan.
- Battery management systems: The device??s fast switching and low conduction loss characteristics are advantageous in battery protection and power distribution modules.
IKD04N60RFATMA1 Brand Info
IKD04N60RFATMA1 is manufactured by a globally recognized semiconductor supplier, offering advanced silicon power solutions for industrial and automotive markets. This specific part leverages proven MOSFET technology to deliver both durability and performance. The brand is known for quality assurance, providing devices rigorously tested for consistency and compliance with industry standards. With a broad portfolio, the manufacturer supports engineers and procurement teams in building reliable, high-efficiency systems using components like the IKD04N60RFATMA1.
FAQ
What is the maximum voltage that the IKD04N60RFATMA1 can withstand?
This device is rated for a maximum drain-source voltage of 600 V, making it suitable for applications that require high voltage handling, such as power supplies and inverters.
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Which package type is used for IKD04N60RFATMA1?
The product is supplied in a TO-220FP package, which is well-known for effective thermal dissipation and straightforward mounting onto PCBs or heatsinks.
What are the main efficiency advantages of this MOSFET?
Its low on-resistance (1.63 ??) and low gate charge (24 nC) help reduce both conduction and switching losses, thereby enhancing overall system efficiency in power electronics applications.
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Can IKD04N60RFATMA1 be used in temperature-critical environments?
Yes, with an operating temperature range from -55??C to +150??C, this device is suitable for use in harsh and thermally demanding environments, such as industrial control systems.
Is this MOSFET suitable for high-frequency switching applications?
Absolutely. Its fast switching performance, supported by a low gate charge, enables efficient operation at higher frequencies, making it ideal for modern power conversion and inverter circuits.
