AIKQ200N75CP2XKSA1 Power MOSFET 75V 200A TO-247 Transistor Package

  • Enables efficient switching and power management in electronic circuits, supporting stable device operation.
  • Features a TO-263 package, offering a low-profile design that helps save board space in compact assemblies.
  • Suitable for use in motor control systems, where precise switching improves energy efficiency and performance.
  • AIKQ200N75CP2XKSA1 is built for easy surface mounting, simplifying automated production and assembly processes.
  • Manufactured to rigorous industry standards, ensuring consistent performance and dependable long-term operation.
SKU: AIKQ200N75CP2XKSA1 Category: Brand:
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产品上方询盘

AIKQ200N75CP2XKSA1 Overview

The AIKQ200N75CP2XKSA1 is a high-performance N-channel MOSFET optimized for demanding industrial and power management applications. Designed for efficiency and reliability, this device offers low on-state resistance and robust voltage handling, making it suitable for high-current switching tasks. Its advanced construction supports superior thermal management, contributing to long-term operational stability in harsh environments. Ideal for engineers seeking a proven solution, the AIKQ200N75CP2XKSA1 streamlines system integration and supports compact board layouts. For more details, visit IC Manufacturer.

AIKQ200N75CP2XKSA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 75V
Continuous Drain Current (ID) 200A
RDS(on) (Max) 2.2 m??
Package Type PG-HSOF-8-1
Mounting Style Surface Mount
Polarity N-Channel
Operating Temperature Range -55??C to +175??C

AIKQ200N75CP2XKSA1 Key Features

  • High current capability: Supports continuous drain current up to 200A, enabling robust performance in heavy-duty switching and motor drive applications.
  • Low RDS(on): With a maximum on-resistance of just 2.2 m??, this MOSFET minimizes conduction losses, enhancing overall energy efficiency for power conversion systems.
  • Wide temperature range: Rated for operation from -55??C to +175??C, it maintains stability and reliability in both cold and high-temperature industrial environments.
  • Compact surface-mount package: The PG-HSOF-8-1 package streamlines PCB design, allowing for higher power density and ease of assembly in automated processes.

AIKQ200N75CP2XKSA1 Advantages vs Typical Alternatives

This device stands out due to its combination of low RDS(on) and high current handling, which reduces power loss and supports more compact, efficient designs. Its broad operating temperature range ensures stable performance in critical industrial settings, while the advanced package type facilitates reliable integration and improved thermal characteristics compared to conventional alternatives.

Typical Applications

  • Industrial motor drives: Well-suited for high-current motor control circuits, this MOSFET delivers efficient switching, reducing heat generation and supporting reliable long-term operation in automation systems.
  • DC-DC converters: Used in power regulation modules where high efficiency and low conduction loss are required for stable voltage output.
  • Battery management systems: Enables safe and efficient control of charging and discharging cycles in energy storage solutions, thanks to its robust voltage and current ratings.
  • Uninterruptible power supplies (UPS): Provides reliable high-speed switching performance for backup power systems, ensuring seamless switchover and minimal losses.

AIKQ200N75CP2XKSA1 Brand Info

The AIKQ200N75CP2XKSA1 is manufactured by a leading global provider of advanced power semiconductors. Known for its commitment to quality and innovation, the brand supports industrial engineers and OEMs with components that meet strict reliability and performance standards. This product exemplifies the brand??s focus on delivering MOSFETs optimized for energy efficiency, high current handling, and robust operation, helping customers build next-generation power control solutions.

FAQ

What makes the AIKQ200N75CP2XKSA1 suitable for high-current applications?

Its continuous drain current rating of 200A ensures reliable handling of large power loads, while the low RDS(on) minimizes conduction losses, making it ideal for demanding switching and drive circuits.

How does the low RDS(on) value benefit power electronics designers?

The low on-state resistance of 2.2 m?? reduces power dissipation during operation, increases overall circuit efficiency, and contributes to cooler device temperatures, which is crucial for compact high-power designs.

Can this MOSFET be used in harsh industrial environments?

Yes, its wide operating temperature range from -55??C to +175??C, along with its robust surface-mount package, ensures dependable operation and long-term reliability even in challenging environmental conditions.

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产品中间询盘

What packaging advantages does the PG-HSOF-8-1 offer?

This surface-mount package supports efficient heat dissipation and allows for automated assembly, making it easier to design compact power modules with high reliability and manufacturability.

For which types of circuits is this device the preferred choice?

It is particularly well-suited for applications such as motor drives, DC-DC converters, battery management systems, and UPS units, where high efficiency, fast switching, and robust current handling are essential.

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