IKQ75N120CH3XKSA1 IGBT Transistor Module, 1200V 75A, TO-247 Package

  • Enables efficient switching and control of high-power electronic circuits for industrial and automotive needs.
  • The TO-247 package allows for straightforward mounting and effective heat dissipation in demanding environments.
  • Compact design conserves board space, making it suitable for dense power module layouts and limited enclosures.
  • Ideal for use in motor drives or inverters, where reliable performance and robust handling are essential.
  • Manufactured with strict process controls to promote consistent operation and long-term device stability.
SKU: IKQ75N120CH3XKSA1 Category: Brand:
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产品上方询盘

IKQ75N120CH3XKSA1 Overview

The IKQ75N120CH3XKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding industrial and power switching applications. Engineered for efficiency and reliability, this device leverages advanced trench and field-stop technology to deliver fast switching capabilities with minimized conduction and switching losses. Its robust construction allows for high voltage operation, making it suitable for modern inverter and motor drive systems. The package type ensures ease of integration within a variety of hardware setups, supporting system designers in developing compact and high-efficiency solutions. For more details, visit IC Manufacturer.

IKQ75N120CH3XKSA1 Technical Specifications

Parameter Value
Type IGBT (Insulated Gate Bipolar Transistor)
Collector-Emitter Voltage (VCES) 1200 V
Continuous Collector Current (IC) 75 A
Configuration Single
Mounting Type Through Hole
Package / Case TO-247-3
Polarity N-Channel
Product Category IGBTs – Single Transistor

IKQ75N120CH3XKSA1 Key Features

  • Advanced trench and field-stop IGBT technology delivers low switching and conduction losses, enabling higher overall system efficiency.
  • High voltage rating of 1200 V supports demanding industrial environments, allowing safe operation in motor drives and inverter applications.
  • Continuous collector current up to 75 A provides robust power handling for heavy-duty switching tasks.
  • TO-247-3 package enhances thermal performance and simplifies PCB integration, optimizing heat dissipation.
  • Single transistor configuration streamlines design while offering design flexibility for engineers.

IKQ75N120CH3XKSA1 Advantages vs Typical Alternatives

Compared to conventional power transistors, this device offers superior efficiency due to its advanced trench and field-stop technology, which reduces both conduction and switching losses. Its high voltage capability and robust current rating provide enhanced reliability and performance in industrial control systems, making it a preferred choice for engineers seeking optimized power conversion and minimal energy waste.

Typical Applications

  • Industrial inverter systems benefit from the high voltage tolerance and fast switching speed, improving power conversion efficiency and overall system reliability.
  • Motor drive solutions utilize this IGBT for precise control and robust operation in variable speed applications.
  • Power supplies and uninterruptible power systems (UPS) leverage its current handling capacity for dependable energy delivery.
  • Welding equipment and induction heating systems take advantage of its durability and efficiency under continuous, high-load switching cycles.

IKQ75N120CH3XKSA1 Brand Info

IKQ75N120CH3XKSA1 is a product developed for demanding industrial and power electronics markets, emphasizing advanced semiconductor process technology and robust packaging. This device showcases the brand??s dedication to high-quality power switching solutions, supporting engineers with reliable, efficient, and high-performance components for critical applications. The product stands as a testament to the manufacturer??s commitment to innovation in power semiconductor devices.

FAQ

What is the maximum collector-emitter voltage for IKQ75N120CH3XKSA1?

The maximum collector-emitter voltage is 1200 V, allowing the device to be used in high-voltage circuits such as industrial inverters and motor drives where insulation and breakdown margin are critical.

What package type does the IKQ75N120CH3XKSA1 utilize?

This IGBT is supplied in a TO-247-3 through-hole package, which offers excellent thermal management and easy integration into existing designs, particularly where heat dissipation and mechanical stability are required.

Is the IKQ75N120CH3XKSA1 suitable for high current applications?

Yes, with a continuous collector current rating of 75 A, this device is designed to handle substantial power loads, making it ideal for applications like industrial drives, power supplies, and high-power switching circuits.

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产品中间询盘

What are the main benefits of trench and field-stop technology in this device?

Trench and field-stop technology significantly reduces switching and conduction losses, improving overall efficiency and thermal performance, which is especially beneficial for long-term reliability and energy savings in industrial systems.

Can IKQ75N120CH3XKSA1 be used in motor control applications?

Absolutely. The combination of high voltage, robust current capability, and efficient switching makes this IGBT well-suited for motor control, supporting precise speed and torque regulation in variable-frequency drive systems.

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