IGQ75N120S7XKSA1 IGBT Transistor Module, 1200V 75A, TO-247 Package

  • Designed for efficient switching and power management in electronic circuits, supporting reduced energy loss during operation.
  • Features a 1200V voltage rating, allowing safe use in high-voltage systems where insulation and protection are critical.
  • Comes in a TO-247 package, providing a balance of thermal performance and compact board footprint for dense layouts.
  • Well-suited for industrial motor drives, enabling smoother control and greater operational efficiency in automation equipment.
  • Manufactured to maintain consistent performance under demanding conditions, supporting long-term reliability in key applications.
SKU: IGQ75N120S7XKSA1 Category: Brand:
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产品上方询盘

IGQ75N120S7XKSA1 Overview

The IGQ75N120S7XKSA1 is a robust 1200V, 75A insulated-gate bipolar transistor (IGBT) designed for high-efficiency, high-reliability switching in demanding industrial and power electronics systems. Featuring low switching losses and fast switching performance, this device is optimized for use in motor drives, renewable energy inverters, and industrial power supplies. Its advanced design ensures consistent performance even in harsh environments, making it a trusted choice for engineers seeking efficiency and durability. Discover more at IC Manufacturer.

IGQ75N120S7XKSA1 Technical Specifications

Parameter Value
IGBT Type Field Stop 7
Collector-Emitter Voltage (VCES) 1200 V
Continuous Collector Current (IC) 75 A
Maximum Gate-Emitter Voltage (VGE) ?I20 V
Power Dissipation (Ptot) 417 W
Collector-Emitter Saturation Voltage (VCE(sat)) 1.75 V (typical)
Switching Frequency Up to 30 kHz
Package TO-247-3
Operating Temperature Range -40??C to +150??C

IGQ75N120S7XKSA1 Key Features

  • High-voltage capability up to 1200V enables safe and efficient operation in medium- and high-voltage applications, reducing component count and system complexity.
  • Low collector-emitter saturation voltage (VCE(sat)) minimizes conduction losses, directly improving overall system efficiency for users.
  • Field Stop 7 technology provides fast switching with reduced switching losses, which is essential for high-frequency applications and thermal management.
  • Rugged TO-247-3 package ensures robust mechanical protection and effective heat dissipation for high-power designs.
  • Wide operating temperature range from -40??C to +150??C supports reliable performance in challenging industrial environments.

IGQ75N120S7XKSA1 Advantages vs Typical Alternatives

This IGBT offers superior efficiency and reliability compared to standard alternatives, thanks to Field Stop 7 technology and a low VCE(sat). Its high voltage and current ratings allow for greater design flexibility, while the robust TO-247-3 package improves thermal performance and device longevity. These features make it ideal for demanding industrial and power conversion systems, where reliability and efficiency are critical.

Typical Applications

  • Industrial motor drives: Delivers efficient, high-current switching for AC and DC motors in automation, robotics, and process control systems, ensuring precise speed and torque control.
  • Renewable energy inverters: Ideal for solar and wind inverter designs requiring high reliability and fast switching to maximize energy conversion efficiency.
  • Uninterruptible power supplies (UPS): Supports high-power switching in UPS systems, providing stable backup power for critical loads in commercial and industrial settings.
  • Welding equipment: Provides robust and efficient switching for high-power welding machines, enhancing operational lifespan and performance consistency.

IGQ75N120S7XKSA1 Brand Info

The IGQ75N120S7XKSA1 is produced by a leading manufacturer specializing in advanced power semiconductor solutions. This product represents the latest in Field Stop 7 IGBT technology, delivering a balance of low losses, high reliability, and mechanical robustness. Designed for engineers and sourcing professionals, it meets demanding requirements across industrial, energy, and automation sectors, reflecting the brand??s commitment to innovation and quality in power electronics.

FAQ

What is the maximum collector-emitter voltage rating for this IGBT?

The maximum collector-emitter voltage rating for this device is 1200 V, making it suitable for medium- and high-voltage industrial applications that require robust insulation and safe operation under demanding conditions.

What package does the device use and why is this important?

This IGBT comes in a TO-247-3 package, which is widely used in high-power applications for its excellent mechanical strength and superior thermal dissipation, ensuring reliable operation in environments with significant thermal cycling.

Is this device suitable for high-frequency switching?

Yes, with a switching frequency capability of up to 30 kHz and field stop technology, the device is well-suited for high-frequency applications such as renewable energy inverters and motor drives where efficiency and low switching losses are required.

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产品中间询盘

What makes Field Stop 7 technology beneficial in this IGBT?

Field Stop 7 technology provides a combination of fast switching, reduced switching and conduction losses, and improved ruggedness, which translates to increased efficiency and reliability in demanding industrial and power electronic applications.

In what environments can this IGBT operate reliably?

This device is rated for operation from -40??C to +150??C, allowing it to function reliably in a wide range of ambient conditions, including harsh industrial or outdoor environments where temperature extremes are common.

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