IKW75N120CH7XKSA1 IGBT Transistor 1200V 75A TO-247 Power Module

  • Offers efficient switching for high-power electronic circuits, enabling precise control and reduced energy loss.
  • The TO-247-3 package provides robust thermal management, supporting stable operation in demanding environments.
  • Compact TO-247-3 design helps save valuable board space in power supply or inverter assemblies.
  • Frequently used in industrial motor drives, the device enhances system performance and operational efficiency.
  • Manufactured for durability, helping ensure consistent performance over extended operational periods.
SKU: IKW75N120CH7XKSA1 Category: Brand:
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IKW75N120CH7XKSA1 Overview

The IKW75N120CH7XKSA1 is a high-performance insulated-gate bipolar transistor (IGBT) designed for demanding industrial and power conversion applications. With robust voltage and current ratings, this device delivers reliable switching performance and high efficiency in circuits requiring fast switching and low conduction losses. Its advanced construction enables superior thermal management, ensuring stable operation even under heavy loads. Ideal for engineers seeking a dependable IGBT solution, it supports precise control and power handling across a broad range of energy, motor drive, and inverter designs. Learn more about industrial semiconductors at IC Manufacturer.

IKW75N120CH7XKSA1 Technical Specifications

Parameter Value
Transistor Type IGBT (Insulated-Gate Bipolar Transistor)
Collector-Emitter Voltage (VCES) 1200 V
Collector Current (IC) 75 A
Configuration Single
Package / Case TO-247-3
Mounting Type Through Hole
Operating Temperature Range -40??C to +150??C
Polarity N-Channel
Number of Pins 3

IKW75N120CH7XKSA1 Key Features

  • High voltage capability up to 1200 V, enabling use in medium and high-voltage converters and inverters for industrial drives.
  • 75 A collector current rating supports high power density applications, allowing designers to handle substantial loads efficiently.
  • Robust TO-247-3 package offers excellent thermal performance and ease of integration into power electronic assemblies.
  • Wide operating temperature range from -40??C to +150??C ensures reliable function in demanding environments and industrial applications.

IKW75N120CH7XKSA1 Advantages vs Typical Alternatives

This IGBT offers a combination of high collector-emitter voltage and substantial current handling, making it suitable for applications demanding both power and reliability. The device??s thermal performance and robust packaging stand out compared to typical alternatives, supporting higher efficiency and longer operational life in industrial settings. Engineers benefit from its integration flexibility and excellent switching characteristics.

Typical Applications

  • Industrial motor drives: Used for precise control and efficient operation of three-phase motors in automation and manufacturing equipment, thanks to its high current and voltage ratings.
  • Inverter systems: Perfect for renewable energy inverters and uninterruptible power supplies, where high efficiency and durable switching are required.
  • Welding equipment: Provides robust switching and current handling for professional welding machines used in construction and fabrication industries.
  • Power supplies: Applied in programmable power supplies and high-power battery chargers where stable, reliable switching is crucial.

IKW75N120CH7XKSA1 Brand Info

The IKW75N120CH7XKSA1 is manufactured by a recognized leader in the power semiconductor industry, known for offering reliable and high-performance solutions for industrial and commercial applications. This device exemplifies the brand??s commitment to innovation, quality, and efficiency, providing engineers with a dependable building block for advanced power conversion and control systems.

FAQ

What type of transistor is the IKW75N120CH7XKSA1?

This device is an insulated-gate bipolar transistor (IGBT), combining the high input impedance of a MOSFET with the low saturation voltage of a bipolar transistor, making it ideal for high-power switching applications.

Which package is used for the IKW75N120CH7XKSA1?

The device is provided in a TO-247-3 through-hole package, which supports efficient heat dissipation and straightforward mounting for industrial power assemblies.

What is the maximum collector-emitter voltage for this IGBT?

The maximum collector-emitter voltage supported by this device is 1200 V, making it suitable for medium and high-voltage switching circuits.

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产品中间询盘

Can this device be used in high-temperature environments?

Yes, the IKW75N120CH7XKSA1 is rated for operation in a wide temperature range from -40??C to +150??C, ensuring reliability in demanding thermal conditions.

What are typical applications for this IGBT?

This device is commonly used in industrial motor drives, inverter systems, welding equipment, and high-power supplies due to its high current and voltage ratings, robust design, and reliable performance.

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