AIKW50N60CTXKSA1 IGBT Transistor, 600V 50A, TO-247 Package

  • Efficiently controls high-power switching, enabling robust performance in demanding electronic circuits.
  • Features a TO-247 package, which supports easy mounting and effective thermal management on PCBs.
  • Compact package design saves board space, aiding miniaturization of power systems and reducing overall device footprint.
  • Commonly used in industrial motor drives, offering dependable operation in high-voltage environments.
  • Manufactured to meet rigorous quality standards, promoting consistent and reliable functionality over extended use.
SKU: AIKW50N60CTXKSA1 Category: Brand:
Infineon logo
产品上方询盘

AIKW50N60CTXKSA1 Overview

The AIKW50N60CTXKSA1 is a high-performance N-channel MOSFET designed for industrial and power management applications. With a voltage rating of 600V and a continuous drain current capacity of 50A, this device stands out for its robust efficiency and consistent switching characteristics. Its advanced silicon technology ensures low on-resistance and reliable thermal stability, making it suitable for demanding environments. These features make it an ideal choice for engineers and sourcing professionals seeking a dependable solution for high-power circuits and energy conversion systems. For more detailed information, please visit IC Manufacturer.

AIKW50N60CTXKSA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Drain-to-Source Voltage (VDS) 600 V
Continuous Drain Current (ID) 50 A
On-Resistance (RDS(on)) Max. 0.045 ??
Gate Charge (Qg) 210 nC
Package Type TO-247-3
Operating Temperature Range -55??C to +150??C
Mounting Type Through Hole
Polarity N-Channel

AIKW50N60CTXKSA1 Key Features

  • High voltage capability (600V) supports robust operation in demanding industrial and energy management circuits.
  • Low on-resistance (max. 0.045 ??) minimizes conduction losses, which improves energy efficiency and reduces heat generation.
  • Large continuous drain current (50A) enables handling of substantial power loads, making it ideal for high-current switching applications.
  • Wide operating temperature range (-55??C to +150??C) ensures reliable performance in harsh environments.
  • TO-247-3 package design offers excellent thermal dissipation for improved device longevity and stability.
  • High gate charge (210 nC) facilitates fast switching speeds, optimizing overall system response time.

AIKW50N60CTXKSA1 Advantages vs Typical Alternatives

Leveraging advanced N-channel MOSFET technology, this device offers superior voltage and current handling compared to many standard power transistors. Its low on-resistance and efficient thermal management enable higher system reliability and lower energy losses in demanding industrial applications. These attributes provide significant benefits in terms of performance and operational cost savings, especially in continuous duty cycles where reliability is critical.

Typical Applications

  • Switching power supplies: The device’s high voltage and current ratings make it suitable for use in high-efficiency AC-DC or DC-DC converters where robust, reliable switching is essential.
  • Motor drives: Its ability to handle high continuous currents supports use in industrial motor control circuits, ensuring stable operation even under heavy loads.
  • Inverters: Suitable for solar, UPS, and industrial inverter applications, the device’s characteristics help optimize power conversion efficiency and heat management.
  • Uninterruptible power supplies (UPS): Its fast switching and high reliability are ideal for critical backup power applications, minimizing downtime and ensuring system protection.

AIKW50N60CTXKSA1 Brand Info

The AIKW50N60CTXKSA1 is manufactured by a leading provider in the semiconductor industry, known for producing reliable and high-performance power devices. This product is engineered to meet the rigorous demands of modern industrial and energy management systems, offering a blend of durability, efficiency, and operational safety. Its proven design and robust package make it a preferred choice among professional engineers and OEMs looking for dependable, high-voltage MOSFET solutions.

FAQ

What is the maximum drain-to-source voltage supported by this MOSFET?

The device supports a maximum drain-to-source voltage of 600V, making it ideal for high-voltage switching and energy conversion applications across various industrial segments.

What package type is used for this component?

This MOSFET is supplied in a TO-247-3 through-hole package, which is recognized for its excellent thermal performance and ease of mounting in power electronics assemblies.

How does the low on-resistance benefit my application?

The low on-resistance, with a maximum of 0.045 ??, minimizes conduction losses during operation. This results in less heat generation, improved energy efficiency, and reduced need for extensive thermal management solutions.

📩 Contact Us

产品中间询盘

Can this MOSFET operate reliably in harsh environments?

Yes, thanks to its wide operating temperature range from -55??C to +150??C, it is well-suited for use in environments with significant temperature variation or challenging thermal conditions.

What are typical uses for this device in industrial systems?

Common applications include switching power supplies, motor control circuits, inverters for renewable energy systems, and uninterruptible power supplies. Its high current and voltage ratings make it a versatile choice for demanding power management tasks.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?