IKWH75N65EH7XKSA1 IGBT Transistor, 75A 650V, TO-247 Package, Power Switch

IKWH75N65EH7XKSA1 Overview

The IKWH75N65EH7XKSA1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) optimized for demanding power electronics applications. It combines fast switching capability, robust voltage blocking, and efficient conduction characteristics, making it an excellent choice for industrial systems requiring reliable high-voltage switching. With its low on-state voltage and advanced design, this device delivers improved energy efficiency and thermal management in a compact TO-247-3 package. The IKWH75N65EH7XKSA1 is well-suited for engineers seeking dependable, cost-effective solutions for motor drives, inverters, and power supply designs. For detailed procurement support, visit IC Manufacturer.

IKWH75N65EH7XKSA1 Technical Specifications

IKWH75N65EH7XKSA1 Key Features

• High voltage capability (650 V) enables the device to handle medium to high power loads, ensuring compatibility with a wide range of industrial and automotive systems.
• Robust collector current rating (75 A) allows for efficient operation in high current switching environments, supporting applications like motor drives and power inverters.
• Low collector-emitter saturation voltage (1.55 V) reduces conduction losses, leading to improved energy efficiency and reduced heat generation during operation.
• Wide operating temperature range from -40??C to +175??C offers reliability and consistent performance even in harsh and demanding environments.
• Compact TO-247-3 package design ensures easy integration into existing board layouts and supports high power density designs.
• NPT (Non-Punch Through) IGBT structure provides robust short-circuit ruggedness and stable electrical characteristics over the full temperature range.

IKWH75N65EH7XKSA1 Advantages vs Typical Alternatives

Compared to typical alternatives in the IGBT category, this component stands out due to its combination of high voltage rating, substantial current capability, and low saturation voltage. These attributes provide enhanced energy efficiency, superior thermal management, and improved reliability in long-term operation. Its rugged NPT technology further offers robust performance under stressful conditions, making it a preferred solution for demanding power electronics applications where both efficiency and dependability are essential.

Typical Applications

• Industrial motor drives: The device??s high current rating and efficient switching make it ideal for controlling large motors in variable speed drives, where reliability and low losses are critical for continuous industrial operations.
• Power inverters: Suitable for incorporation into inverter circuits for renewable energy systems, such as solar or wind power, where efficient DC-AC conversion is necessary.
• Switch mode power supplies (SMPS): Its robust voltage and current ratings allow for dependable operation in high-power SMPS circuits, delivering efficiency and thermal stability.
• Uninterruptible power supplies (UPS): This IGBT can be used for high-power switching in UPS systems, ensuring reliable backup power delivery and minimal energy losses.

IKWH75N65EH7XKSA1 Brand Info

The IKWH75N65EH7XKSA1 represents advanced semiconductor engineering, integrating robust NPT IGBT technology for consistent performance in high-stress environments. Manufactured by a leading provider of industrial power components, this device is designed to deliver a balance of high voltage tolerance, strong current handling, and efficient switching. Its application-centric design caters to the needs of engineers and system integrators seeking dependable, long-lasting solutions for power conversion and motor control systems.

FAQ

What makes the IKWH75N65EH7XKSA1 suitable for high-power industrial applications?

Its 650 V voltage rating combined with a 75 A collector current capability enables this IGBT to efficiently switch and control large power loads, making it highly suitable for demanding industrial environments such as motor drives and inverters.

How does the low collector-emitter saturation voltage benefit my design?

A collector-emitter saturation voltage of just 1.55 V means reduced conduction losses during operation. This directly translates to improved efficiency and minimized heat generation, which is crucial for compact, high-performance power electronics.

Is the IKWH75N65EH7XKSA1 reliable in harsh operating conditions?

Yes, thanks to its wide operating temperature range from -40??C up to +175??C and robust NPT structure, this device maintains stable performance even in challenging thermal and electrical environments frequently found in industrial settings.

Can this IGBT be easily integrated into existing power designs?

The standardized TO-247-3 package and through-hole mounting style simplify integration into a wide range of power system layouts, supporting both new designs and upgrades of legacy systems demanding high power density.

What types of systems benefit most from implementing this NPT IGBT?

Industrial motor drives, power inverters for renewable energy, switch mode power supplies, and uninterruptible power supplies all benefit from this device??s combination of high voltage, high current, and efficiency-focused design, ensuring robust and reliable system operation.