IHW40N140R5LXKSA1 Power MOSFET Transistor, TO-247 Package, High Voltage

  • Designed for high-speed switching, this power MOSFET efficiently controls energy in demanding electronic circuits.
  • Features a TO-247 package, offering a compact footprint that helps save valuable board space in system designs.
  • Handles high voltages, making it suitable for power conversion and motor drive applications requiring robust performance.
  • Well-suited for use in industrial power supplies, where stable operation and efficient switching are essential.
  • Constructed for consistent reliability, ensuring long-term operation in both commercial and industrial environments.
SKU: IHW40N140R5LXKSA1 Category: Brand:
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IHW40N140R5LXKSA1 Overview

The IHW40N140R5LXKSA1 is a robust 1400V, 40A insulated-gate bipolar transistor (IGBT) engineered for high-voltage switching applications. It offers a low on-state voltage and fast switching characteristics, making it suitable for demanding industrial and power electronics designs. This device is well-suited for use in inverter systems, motor drives, power supplies, and other applications requiring efficient energy conversion. Its optimized design ensures high reliability and energy savings, positioning it as a preferred choice for engineers seeking proven performance and cost efficiency. IC Manufacturer

IHW40N140R5LXKSA1 Technical Specifications

Parameter Value
Collector-Emitter Voltage (VCES) 1400 V
Continuous Collector Current (IC) 40 A
Total Power Dissipation (Ptot) 208 W
Collector-Emitter Saturation Voltage (VCE(sat)) 1.45 V (typ)
Gate-Emitter Voltage (VGE) ?I20 V (max)
Maximum Junction Temperature (Tj) 175 ??C
Package Type TO-247
Switching Frequency High (application dependent)

IHW40N140R5LXKSA1 Key Features

  • High voltage capability up to 1400 V, enabling reliable operation in demanding industrial and power conversion systems.
  • Low collector-emitter saturation voltage (VCE(sat)) reduces conduction losses, increasing overall system efficiency.
  • Fast switching performance supports high-frequency operation, minimizing switching losses and enabling compact system designs.
  • Robust TO-247 package provides effective thermal management and mechanical stability in harsh environments.
  • Wide operating temperature range up to 175??C enhances device reliability in both standard and demanding applications.

IHW40N140R5LXKSA1 Advantages vs Typical Alternatives

This IGBT stands out with its combination of high voltage tolerance, low saturation voltage, and fast switching speeds. Compared to typical alternatives, it delivers reduced conduction and switching losses, supporting more compact and efficient power electronics solutions. Its robust thermal design and wide temperature range provide greater reliability and flexibility for industrial system integrators and engineers seeking long-term performance.

Typical Applications

  • Industrial motor drives: The device??s high current and voltage rating make it ideal for variable frequency drives, enabling efficient speed and torque control in factory automation and process industries.
  • Power inverters: Suitable for renewable energy systems such as solar and wind, supporting high-voltage conversion with minimized energy losses.
  • Uninterruptible power supplies (UPS): Ensures reliable and efficient power switching for backup systems, protecting sensitive equipment.
  • Switch-mode power supplies: Enhances efficiency and thermal performance in high-power SMPS topologies for industrial and telecom applications.

IHW40N140R5LXKSA1 Brand Info

The IHW40N140R5LXKSA1 is part of a trusted line of high-performance IGBTs designed for industrial and power electronic applications. This device reflects the manufacturer??s commitment to providing reliable, high-efficiency solutions for power conversion and switching. With proven field performance and a strong reputation in industrial sectors, it is a preferred choice for engineers seeking dependable, well-documented semiconductor solutions.

FAQ

What are the primary considerations when designing with the IHW40N140R5LXKSA1?

Key considerations include ensuring the applied voltage and current remain within the specified 1400V and 40A limits, proper heat sinking due to the 208W power dissipation, and selecting a gate drive circuit compatible with the ?I20V maximum gate-emitter voltage. Attention to these factors will help optimize performance and reliability in application designs.

Can this device be used in high-frequency switching applications?

Yes, this IGBT is designed for fast switching, making it suitable for high-frequency operation. However, switching frequency capability depends on the application??s thermal management and overall circuit design. Proper layout and cooling are recommended to achieve optimal high-speed performance.

What package is used, and what are its implications for mounting?

It comes in a TO-247 package, which offers excellent thermal conductivity and mechanical stability. The package is widely supported for through-hole mounting and allows for straightforward heat sink attachment, supporting reliable operation even in high-power applications.

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Is the IHW40N140R5LXKSA1 suitable for harsh or high-temperature environments?

With a maximum junction temperature of 175??C, this device is well-suited for use in demanding environments. Its robust design and thermal characteristics support long-term operation under elevated temperature conditions, typical in industrial and power systems.

What benefits does the low VCE(sat) provide in real-world applications?

The low collector-emitter saturation voltage directly reduces conduction losses during operation. This translates to less heat generation, improved energy efficiency, and potentially smaller or less costly heat sinking requirements, benefiting overall system design and cost-effectiveness.

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