IGP20N65H5XKSA1 Power MOSFET Transistor TO-247 Package 650V 20A

  • Designed for efficient switching in power electronics, supporting reduced energy loss and heat generation.
  • Features a TO-220 package, offering straightforward through-hole mounting and simplified thermal management.
  • The compact package allows for optimized board layout and space savings in dense circuit designs.
  • Commonly used in power supplies and motor drives, it ensures stable performance in demanding environments.
  • Manufactured with strict quality controls to promote consistent operation and long-term device reliability.
SKU: IGP20N65H5XKSA1 Category: Brand:
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产品上方询盘

IGP20N65H5XKSA1 Overview

The IGP20N65H5XKSA1 is a high-performance insulated-gate bipolar transistor (IGBT) designed for demanding power switching applications. With a robust structure and optimized switching characteristics, it delivers reliable operation in industrial environments where efficiency and durability are critical. This device is well-suited for engineers seeking a solution that balances low conduction losses and fast switching performance. Its advanced design enables integration into a wide range of power electronic systems, making it a preferred choice for applications requiring high voltage endurance and consistent operation. For further technical details, visit the IC Manufacturer.

IGP20N65H5XKSA1 Technical Specifications

Parameter Value
Product Type IGBT (Insulated-Gate Bipolar Transistor)
Collector-Emitter Voltage (VCES) 650 V
Continuous Collector Current (IC) 40 A
Collector-Emitter Saturation Voltage (VCE(sat)) 1.6 V
Gate Charge (Qg) 129 nC
Turn-Off Energy (Eoff) 2.1 mJ
Power Dissipation (Ptot) 208 W
Package TO-247-3
Operating Temperature Range -55??C to 150??C

IGP20N65H5XKSA1 Key Features

  • High collector-emitter voltage rating of 650 V ensures suitability for robust industrial power systems, increasing safety margins in high-voltage environments.
  • Low collector-emitter saturation voltage (1.6 V) reduces conduction losses, resulting in improved system efficiency and lower heat dissipation.
  • Optimized gate charge enables faster switching, which is essential for high-frequency power conversion and efficient inverter topologies.
  • TO-247-3 package provides enhanced thermal management, supporting higher power dissipation and reliable operation in demanding installations.

IGP20N65H5XKSA1 Advantages vs Typical Alternatives

This IGBT stands out due to its combination of high current capability and low saturation voltage, which collectively minimize conduction losses and improve energy efficiency. The fast switching characteristics, together with robust voltage handling, offer significant advantages for applications demanding high reliability and precision. Its package design also promotes superior thermal performance compared to standard alternatives, supporting extended operation and system longevity through better heat management and integration.

Typical Applications

  • Industrial motor drives: The device??s high voltage and current ratings make it ideal for use in variable frequency drives and industrial motor controllers, where efficient power switching is essential.
  • Power inverters: Suitable for renewable energy systems and uninterruptible power supplies, providing reliable DC-AC conversion with minimized switching losses.
  • Welding equipment: Supports robust performance in demanding welding machines, offering high current handling and fast switching to enhance welding precision and efficiency.
  • Switch-mode power supplies: Enables effective power regulation and conversion in large-scale SMPS applications, benefiting from its high efficiency and reliability.

IGP20N65H5XKSA1 Brand Info

The IGP20N65H5XKSA1 is part of a reputable lineup of power semiconductors known for their innovation and quality in industrial electronics. This specific IGBT is engineered to meet the rigorous demands of modern power electronics, combining advanced material science with precise manufacturing standards. Its design reflects the brand??s focus on delivering products that enable energy efficiency, system robustness, and application flexibility across a broad spectrum of industrial and commercial sectors.

FAQ

What makes the IGP20N65H5XKSA1 suitable for high-voltage applications?

The 650 V collector-emitter voltage rating ensures safe and consistent operation in high-voltage environments. This allows the device to be reliably integrated into demanding industrial systems that require elevated voltage handling without compromising safety or performance.

How does the low collector-emitter saturation voltage benefit my design?

With a VCE(sat) of just 1.6 V, the device significantly reduces conduction losses during operation. This directly improves energy efficiency, minimizes heat generation, and can help lower the requirements for external cooling components in your design.

Is the IGP20N65H5XKSA1 suitable for high-frequency switching?

Yes, the optimized gate charge and rapid switching characteristics support efficient high-frequency operation. This makes the device well-suited for inverters, motor drives, and other systems where fast and accurate switching is required for performance and efficiency.

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产品中间询盘

What thermal advantages does the TO-247-3 package provide?

The TO-247-3 package is designed for enhanced heat dissipation, supporting higher power handling and improving overall device reliability. This allows the transistor to maintain stable operation even under continuous heavy loads in industrial environments.

Which industries benefit most from using this IGBT?

Industries such as industrial automation, renewable energy, welding, and large-scale power supplies benefit from the device??s reliable performance, high voltage endurance, and efficient power management. Its versatility makes it a valuable component in a variety of demanding applications.

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