IKD15N60RC2ATMA1 Power MOSFET Transistor, TO-220 Package, High Voltage

IKD15N60RC2ATMA1 Overview

The IKD15N60RC2ATMA1 is a high-performance insulated-gate bipolar transistor (IGBT) engineered for demanding industrial and power applications. This device offers robust switching capability, efficient energy handling, and reliable thermal management in a compact, industry-standard package. Its advanced design enables low switching losses and high-speed operation, making it ideal for motor drives, inverter systems, and power supply circuits. Sourcing specialists and engineers benefit from its consistent performance and ease of integration. For more information, visit IC Manufacturer.

IKD15N60RC2ATMA1 Technical Specifications

IKD15N60RC2ATMA1 Key Features

• High voltage tolerance up to 600 V enables safe operation in medium- to high-voltage environments, reducing risk of breakdown in industrial power circuits.
• 30 A collector current capability supports substantial load handling, suitable for robust motor control and inverter applications.
• Low switching losses contribute to higher overall efficiency, minimizing heat generation and maximizing energy savings in demanding power conversion systems.
• TO-220-3 standard package ensures easy integration with established PCB layouts and simplifies thermal management for designers.
• High maximum junction temperature (175??C) grants greater reliability and longer life under harsh operating conditions.

IKD15N60RC2ATMA1 Advantages vs Typical Alternatives

This IGBT offers a strong combination of high collector current, elevated voltage tolerance, and low switching losses, which exceeds the typical range for comparable devices. The high power dissipation and robust package promote reliable operation in industrial environments. These advantages make it a preferred choice for designers focused on efficiency, reliability, and straightforward integration in power electronics applications.

Typical Applications

• Industrial motor drives: The device??s high collector current and voltage capability support precise speed and torque control in AC and DC motor drive systems used in manufacturing automation and process control.
• Inverter circuits: Suitable for use in single- and three-phase inverter topologies, allowing efficient conversion and delivery of power in renewable energy and UPS systems.
• Switch-mode power supplies (SMPS): Its fast switching and high efficiency enable compact, reliable designs for industrial and telecom-grade power supplies.
• Uninterruptible power supplies (UPS): Offers dependable switching performance and thermal robustness, ensuring reliable power backup solutions for critical infrastructure.

IKD15N60RC2ATMA1 Brand Info

The IKD15N60RC2ATMA1 is part of a trusted line-up of IGBT solutions designed for energy efficiency and reliability in industrial power control. This product reflects ongoing commitment to robust engineering and quality assurance, offering a well-balanced feature set tailored for power semiconductor markets. Known for consistent performance and ease of adoption, this solution is widely used by system integrators and OEMs seeking dependable, scalable components for modern power conversion applications.

FAQ

What is the collector-emitter voltage rating of the IKD15N60RC2ATMA1?

The collector-emitter voltage is rated at 600 V, making the device suitable for medium- and high-voltage industrial applications where insulation and breakdown resistance are essential.

In which package type is this IGBT supplied?

This component is provided in a TO-220-3 package, which is a widely used standard for through-hole mounting, offering both mechanical stability and efficient heat dissipation during high-load operation.

What is the maximum collector current supported?

The device supports a maximum collector current of 30 A, making it a reliable choice for applications that require handling of significant power loads, such as large motor drives or inverter circuits.

How does the IKD15N60RC2ATMA1 support efficient power conversion?

Thanks to its low switching losses and high power dissipation rating, this IGBT enhances system efficiency, minimizes unwanted heat, and contributes to more compact and reliable power electronics solutions.

Is the IKD15N60RC2ATMA1 suitable for high-temperature environments?

Yes, with a maximum junction temperature of 175??C, this device is engineered to perform reliably in demanding environments where elevated temperatures are common, such as industrial enclosures or power control cabinets.