IHW30N135R5XKSA1 Power MOSFET Transistor, TO-247 Package, Infineon

IHW30N135R5XKSA1 Overview

The IHW30N135R5XKSA1 is a robust IGBT (Insulated Gate Bipolar Transistor) designed for demanding industrial and power switching applications. Engineered for high efficiency and reliability, this device delivers excellent performance in high-voltage, high-current environments. Its optimized structure supports low switching losses, making it suitable for energy-sensitive designs. The component??s ruggedness and proven capability ensure stable operation, even under challenging conditions, making it a trusted solution for engineers seeking durable and efficient IGBT technology. For more details, visit IC Manufacturer.

IHW30N135R5XKSA1 Technical Specifications

IHW30N135R5XKSA1 Key Features

• High collector-emitter voltage rating of 1350 V, enabling safe operation in high-voltage circuits and boosting system reliability.
• Continuous collector current capability of 60 A allows for robust performance in power-intensive applications, minimizing the need for parallel devices.
• Low V_CE(sat) of 1.7 V ensures reduced conduction losses, increasing overall system efficiency and minimizing heat generation.
• Wide operating temperature range from -40??C to +150??C supports deployment in harsh industrial and automotive environments.
• TO-247-3 package offers excellent thermal performance, facilitating straightforward integration and effective heat dissipation.

IHW30N135R5XKSA1 Advantages vs Typical Alternatives

The IHW30N135R5XKSA1 stands out with its combination of high voltage tolerance, substantial current handling, and low saturation voltage. These attributes support superior efficiency and lower thermal stress compared to standard alternatives. The broad temperature range and robust package further enhance reliability, making it an optimal choice for engineers prioritizing durability and energy efficiency in their power designs.

Typical Applications

• Industrial motor drives: The high voltage and current capacity make this IGBT suitable for motor control systems, supporting efficient operation and precise speed regulation in automation and process industries.
• Solar inverters: Its low switching losses and high reliability are valuable in photovoltaic power converters, ensuring stable energy conversion and long service life.
• Uninterruptible Power Supplies (UPS): The device??s efficiency and ruggedness help maintain reliable backup power in critical infrastructure applications.
• Welding equipment: Robust electrical characteristics enable stable power switching, supporting demanding cycles required in industrial welding systems.

IHW30N135R5XKSA1 Brand Info

The IHW30N135R5XKSA1 is manufactured by a leading provider of semiconductor solutions, known for delivering reliable and efficient discrete power devices. This IGBT represents a commitment to quality and innovation, offering advanced performance in high-voltage switching applications. Designed to meet the rigorous demands of industrial environments, the device provides engineers with a trusted and proven option for robust power management and switching tasks.

FAQ

What package does the IHW30N135R5XKSA1 use, and how does it benefit thermal management?

The device is supplied in a TO-247-3 package, which is recognized for excellent thermal conductivity and ease of mounting. This package supports efficient heat dissipation, helping maintain stable operation even in power-demanding applications.

Is the IHW30N135R5XKSA1 suitable for high-frequency switching?

While the device is optimized for low switching losses and high efficiency, suitability for high-frequency switching depends on specific application requirements. Its design supports reliable operation in many industrial and power conversion systems.

What is the maximum collector-emitter voltage rating for this IGBT?

The maximum collector-emitter voltage (V_CES) is 1350 V. This high voltage rating allows the device to be used safely in demanding, high-voltage environments typical of industrial and energy systems.

Can this IGBT be used in automotive or outdoor environments?

With an operating temperature range from -40??C to +150??C, the component can function reliably in harsh environments, including automotive and outdoor industrial settings, where temperature extremes may be encountered.

What are the key benefits of the low V_CE(sat) in this device?

The low collector-emitter saturation voltage (1.7 V) reduces conduction losses, directly improving energy efficiency and minimizing heat generation. This supports longer device life and may lower system cooling requirements.