IGP15N60TXKSA1 Power MOSFET Transistor, TO-220 Package, High Voltage Switch

  • Efficiently controls power switching in electronic circuits, supporting stable and reliable system operation.
  • Features a TO-220 package, which allows for straightforward mounting and effective heat dissipation in power designs.
  • Compact package size helps save board space and simplifies integration into densely populated PCBs.
  • Well-suited for use in power supplies or motor control circuits, enabling precise energy management in demanding applications.
  • Manufactured for consistent performance, reducing risk of failure in continuous or high-stress operational environments.
SKU: IGP15N60TXKSA1 Category: Brand:
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产品上方询盘

IGP15N60TXKSA1 Overview

The IGP15N60TXKSA1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for modern industrial, consumer, and energy applications requiring efficient power switching and control. Offering robust voltage handling and optimized current capacity, it is ideal for demanding environments where reliability and efficiency are critical. Its advanced structure supports fast switching and minimizes losses, making it suitable for a wide range of power management systems. For detailed sourcing and design support, visit IC Manufacturer.

IGP15N60TXKSA1 Technical Specifications

Parameter Value
Product Type IGBT – Insulated Gate Bipolar Transistor
Collector-Emitter Voltage (VCES) 600 V
Continuous Collector Current (IC) 30 A
Collector-Emitter Saturation Voltage (VCE(sat)) 1.8 V
Maximum Gate-Emitter Voltage (VGE) ?I20 V
Power Dissipation (Ptot) 104 W
Operating Temperature Range -55??C to 150??C
Package / Case TO-220-3
Configuration Single

IGP15N60TXKSA1 Key Features

  • High voltage capability (600 V) enables use in demanding power switching applications, delivering robust insulation and safety margins for industrial environments.
  • Low collector-emitter saturation voltage of 1.8 V reduces conduction losses, directly improving system efficiency and minimizing heat generation.
  • Fast switching performance supports high-frequency operation, facilitating compact, lightweight designs in inverters and motor drives.
  • TO-220-3 package ensures easy integration and reliable thermal management, supporting both board-level assembly and heatsink mounting.
  • Wide operating temperature range (-55??C to 150??C) guarantees stable operation in challenging conditions, enhancing overall system reliability.

IGP15N60TXKSA1 Advantages vs Typical Alternatives

Compared to standard IGBT solutions, this device offers superior efficiency through its low VCE(sat) and high current capability. Its combination of robust voltage handling, reliable thermal performance, and fast switching makes it a preferred choice for designers seeking enhanced system reliability and power density in industrial and energy conversion applications. Power control specialists benefit from reduced energy losses and simplified integration.

Typical Applications

  • General-purpose inverters for industrial motor drives, where high voltage tolerance and efficient switching translate to improved energy management and motor performance.
  • Switch-mode power supplies (SMPS) benefit from the device??s low switching losses and fast response, supporting compact, high-efficiency designs.
  • Uninterruptible power supplies (UPS) utilize the transistor??s reliability and wide temperature range for stable operation in backup and emergency power systems.
  • Welding equipment, where high current and voltage ratings ensure dependable performance under heavy load and frequent switching cycles.

IGP15N60TXKSA1 Brand Info

The IGP15N60TXKSA1 is manufactured by a leading global supplier of semiconductor solutions, renowned for producing high-quality power electronic components. This product exemplifies the brand??s commitment to innovation, dependability, and consistent performance in demanding industrial environments. The device is engineered to meet the needs of professional engineers and sourcing specialists looking for reliable IGBT technology with proven field performance.

FAQ

What is the maximum voltage rating for the collector-emitter terminals?

The maximum collector-emitter voltage for this IGBT is 600 V, ensuring compatibility with a broad range of industrial and energy applications that operate at high voltages.

Can this device handle high currents continuously?

Yes, it supports a continuous collector current of 30 A, making it well-suited for applications requiring substantial power delivery, such as motor controls and power inverters.

What package type is offered, and how does it benefit thermal management?

It comes in a TO-220-3 package, which provides efficient heat dissipation and facilitates both PCB mounting and heatsink attachment, essential for reliable operation in power electronics.

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产品中间询盘

Is the device suitable for harsh environmental conditions?

Absolutely. With an operating temperature range from -55??C to 150??C, it is designed to function reliably in both low and high-temperature environments, maintaining stable performance.

What are the key advantages over standard IGBT devices?

This IGBT offers lower conduction loss due to its 1.8 V saturation voltage, fast switching for high-frequency applications, and robust thermal performance, which together contribute to higher efficiency and reliability.

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