IKW75N65EH5XKSA1 Overview
The IKW75N65EH5XKSA1 is a high-voltage, high-current insulated gate bipolar transistor (IGBT) designed for reliable performance in demanding industrial and power applications. Featuring robust switching capabilities and efficient energy handling, this IGBT combines low switching losses with high-speed operation for advanced power control solutions. Its optimized design supports efficient operation in environments where power management, reliability, and thermal control are essential. Sourcing the IKW75N65EH5XKSA1 from a trusted partner like IC Manufacturer ensures consistent quality for your application needs.
IKW75N65EH5XKSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | IGBT (Insulated Gate Bipolar Transistor) |
| Collector-Emitter Voltage (VCES) | 650 V |
| Collector Current (IC) | 75 A |
| Configuration | Single |
| Mounting Type | Through Hole |
| Package/Case | TO-247-3 |
| Technology | Trench Field Stop |
| Operating Temperature Range | -40??C to +150??C |
| Polarity | N-Channel |
| Input Capacitance (Cies) | Not specified |
IKW75N65EH5XKSA1 Key Features
- High collector-emitter voltage rating of 650 V, enabling safe operation in medium and high-voltage power conversion systems.
- 75 A continuous collector current capability, supporting high-load industrial and motor drive applications with robust current handling.
- Trench Field Stop technology ensures reduced switching losses and enhanced energy efficiency, important for minimizing heat generation and maximizing system uptime.
- TO-247-3 package and through-hole mounting facilitate efficient thermal management and mechanical stability in power module designs.
- Wide operating temperature range from -40??C to +150??C, ensuring reliable performance in harsh and demanding industrial environments.
- N-channel configuration provides fast switching characteristics suitable for high-frequency operation and precise control.
- Single IGBT configuration for straightforward integration into inverter stages, power supplies, and motor controllers.
IKW75N65EH5XKSA1 Advantages vs Typical Alternatives
Compared to standard power transistors or legacy IGBT solutions, this device delivers superior voltage and current handling, enhanced by Trench Field Stop technology for lower switching losses. The broad operating temperature range and robust through-hole package improve reliability and simplify integration in industrial power systems. These features combine to provide greater efficiency, reliability, and performance for demanding applications.
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Typical Applications
- Industrial motor drives: The device??s high current and voltage ratings make it ideal for controlling and powering induction motors, servo drives, and variable frequency drives used in factory automation and process control.
- Switch mode power supplies (SMPS): Its efficient switching capability is well-suited to high-power SMPS designs, where energy efficiency and thermal management are critical.
- Uninterruptible power supplies (UPS): Used for efficient AC-DC conversion and backup power systems, enabling reliable operation during power interruptions.
- Renewable energy inverters: Suitable for solar and wind inverter applications, supporting robust DC-AC conversion with minimal losses and high reliability.
IKW75N65EH5XKSA1 Brand Info
The IKW75N65EH5XKSA1 is engineered to meet the stringent demands of modern power electronics, carrying the assurance of reputable manufacturing standards and advanced semiconductor process technology. This IGBT leverages field-proven Trench Field Stop architecture to deliver optimal switching performance and durability. The device is recognized for its consistent performance, quality construction, and suitability for integration in a wide range of power management and industrial automation products. The part??s availability through established supply chains ensures traceability and dependable sourcing for OEMs and contract manufacturers.
FAQ
What is the maximum collector-emitter voltage supported by this IGBT?
The device supports a maximum collector-emitter voltage of 650 V, making it suitable for medium to high-voltage applications such as industrial drives and power conversion systems.
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In what type of package is the IKW75N65EH5XKSA1 supplied?
It is provided in a robust TO-247-3 package, which is commonly used for high-power semiconductors and is designed for through-hole mounting, aiding in effective heat dissipation and mechanical stability.
Can this product be used in high-temperature environments?
Yes, the IGBT is rated for operation within a temperature range of -40??C to +150??C, making it reliable for harsh industrial conditions and environments with wide ambient temperature fluctuations.
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What technology is utilized in this IGBT to improve performance?
The device utilizes advanced Trench Field Stop technology. This process reduces switching losses and enhances overall energy efficiency, which is particularly beneficial for high-frequency and energy-sensitive applications.
What are common use cases for this IGBT?
The part is commonly used in industrial motor drives, switch mode power supplies, UPS systems, and renewable energy inverters. Its high voltage and current capabilities make it versatile for a variety of power conversion and control applications.
