RT314F06 Power MOSFET Transistor – RT314F06 – TO-220 Package

  • Processes high-frequency signals efficiently, enabling precise control in communication systems.
  • Operates within a specified voltage range to ensure stable performance under varying conditions.
  • Features a compact LFCSP package that reduces board space and simplifies thermal management.
  • Ideal for embedded systems requiring reliable signal processing in constrained environments.
  • Designed with rigorous quality checks to maintain consistent operation over extended use.
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RT314F06 Overview

The RT314F06 is a high-performance N-channel MOSFET designed for efficient power switching applications. Engineered to deliver low on-resistance and fast switching speeds, it provides enhanced efficiency and thermal performance in compact packages. This device features robust avalanche energy capability and excellent gate charge characteristics, making it suitable for both automotive and industrial power management systems. Its rugged design ensures reliable operation under demanding electrical and thermal conditions. For sourcing and detailed specifications, visit IC Manufacturer.

RT314F06 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)60V
Continuous Drain Current (ID) @ 25??C31A
Drain-Source On-Resistance (RDS(on)) @ VGS=10V4.5m??
Gate Threshold Voltage (VGS(th))2.0 ?C 4.0V
Total Gate Charge (Qg)35nC
Power Dissipation (PD)75W
Operating Junction Temperature (TJ)-55 to 150??C
Input Capacitance (Ciss)1200pF

RT314F06 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving overall efficiency in power conversion circuits.
  • High Continuous Drain Current: Supports heavy load currents, enabling robust performance in demanding applications.
  • Fast Switching Capability: Reduces switching losses, allowing higher frequency operation with improved thermal management.
  • Wide Operating Temperature Range: Ensures reliability across harsh industrial and automotive environments.
  • Compact Package Design: Allows for space-saving PCB layouts and ease of integration into complex systems.

RT314F06 Advantages vs Typical Alternatives

This MOSFET offers superior low RDS(on) and high current handling compared to typical alternatives, resulting in enhanced power efficiency and reduced thermal stress. Its robust avalanche energy rating improves reliability under transient conditions. The device??s optimized gate charge enables faster switching, making it ideal for high-frequency applications while maintaining thermal stability in compact package formats.

Typical Applications

  • DC-DC converters in automotive and industrial power management systems requiring efficient high-current switching with minimal heat dissipation.
  • Motor control circuits where rapid switching and thermal robustness are critical.
  • Power supply units (PSUs) in consumer electronics or industrial equipment demanding stable operation under various load conditions.
  • Load switching and battery management systems requiring precise control with high efficiency and reliability.

RT314F06 Brand Info

The RT314F06 is a product from a leading semiconductor manufacturer known for high-quality power MOSFETs designed to meet stringent industrial and automotive standards. This device is part of a broad portfolio targeting power efficiency, reliability, and ease of integration. Its development focuses on delivering consistent performance in demanding environments while supporting next-generation power management solutions.

FAQ

What is the maximum drain-source voltage rating of this MOSFET?

The device features a maximum drain-source voltage of 60V, allowing it to operate safely in moderate voltage power switching applications without risk of breakdown under normal operating conditions.

How does the on-resistance impact the efficiency of the RT314F06?

Lower on

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