AEDR-8712-100 Overview
The AEDR-8712-100 is a high-performance phototransistor designed for precise optical detection in industrial and electronic applications. This device offers reliable light sensing capabilities with fast response times and stable operation across a wide spectral range. Its compact design and efficient phototransistor structure make it ideal for integration in automated systems, optical switches, and sensing modules. Manufactured with strict quality controls, the device ensures consistent sensitivity and durability, enabling engineers and sourcing specialists to implement dependable optical detection solutions. For detailed specifications and purchasing options, visit IC Manufacturer.
AEDR-8712-100 Technical Specifications
| Parameter | Specification |
|---|---|
| Phototransistor Type | NPN silicon phototransistor |
| Peak Sensitivity Wavelength | 940 nm (near-infrared) |
| Collector-Emitter Voltage (VCE) | 30 V (maximum) |
| Collector Current (IC) | 50 mA (maximum) |
| Response Time (Rise/Fall) | 5 ??s / 10 ??s |
| Dark Current | ?? 100 nA |
| Operating Temperature Range | -25??C to +85??C |
| Package Type | Standard 3-pin epoxy package |
AEDR-8712-100 Key Features
- High Sensitivity: The device??s peak sensitivity at 940 nm enables accurate detection of near-infrared light, enhancing performance in optical sensing applications.
- Fast Switching Response: With rise and fall times of 5 ??s and 10 ??s respectively, it supports rapid signal changes critical for high-speed communication and control systems.
- Wide Operating Temperature Range: Designed to operate reliably between -25??C and +85??C, it ensures stable performance in diverse environmental conditions.
- Low Dark Current: Minimal leakage current improves signal-to-noise ratio, contributing to precise measurement and energy efficiency in circuits.
AEDR-8712-100 Advantages vs Typical Alternatives
This phototransistor offers superior near-infrared sensitivity and faster response times compared to typical components in its class. Its low dark current and robust operation across a wide temperature range enhance reliability and accuracy, making it a preferred choice for demanding optical sensing tasks. The compact, industry-standard packaging also simplifies integration into existing designs, providing a significant advantage in both manufacturing and performance.
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Typical Applications
- Infrared remote control receivers: The device??s sensitivity at 940 nm aligns perfectly with common IR remote signals, ensuring dependable command reception in consumer electronics and industrial controls.
- Optical switches and encoders for automation systems, enabling precise position detection and signal processing with fast response times.
- Light measurement and ambient light sensing in instrumentation, where quick and accurate detection improves system responsiveness.
- Safety and security systems, such as intrusion detectors or object counters, leveraging the phototransistor??s low noise and stable operation.
AEDR-8712-100 Brand Info
Produced by a leading semiconductor manufacturer, this phototransistor is part of a trusted lineup of optoelectronic components recognized for quality and reliability. The product is engineered to meet stringent industry standards, ensuring consistency in performance and longevity. Its design reflects the brand??s commitment to innovation and customer support, providing engineers and sourcing specialists with a dependable component for critical optical sensing applications.
FAQ
What is the primary spectral sensitivity of this phototransistor?
The phototransistor is optimized for near-infrared detection, with peak sensitivity at approximately 940 nm. This makes it ideal for applications involving IR communication and sensing.
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Can this device operate reliably in harsh temperature environments?
Yes, it supports an operating temperature range from -25??C to +85??C, ensuring stable functionality in various industrial and outdoor conditions.
What are the maximum voltage and current ratings for safe operation?
The maximum collector-emitter voltage rating is 30 V, and the maximum collector current is 50 mA. Staying within these limits ensures device longevity and safe operation.
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How fast is the response time of the phototransistor?
The device features a rise time of approximately 5 microseconds and a fall time of about 10 microseconds, allowing for fast switching suitable for communication and control circuits.
What packaging does this component use, and how does it aid integration?
It comes in a standard 3-pin epoxy package, which is widely used in industry. This facilitates easy mounting on printed circuit boards and compatibility with automated assembly processes.
