AEDR-8723-102 Overview
The AEDR-8723-102 is a high-performance infrared phototransistor designed for precision optical sensing applications. Optimized for wavelengths around 870 nm, it offers fast response times and excellent sensitivity, making it ideal for industrial automation and communication systems. This device exhibits a compact package that facilitates easy integration into various electronic designs while maintaining reliable performance. Its robust construction ensures stable operation under diverse environmental conditions. Engineers and sourcing specialists benefit from its proven consistency and compatibility with standard drive circuits, enhancing overall system efficiency. For more information, visit IC Manufacturer.
AEDR-8723-102 Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Peak Sensitivity Wavelength | 870 | nm |
| Collector-Emitter Voltage (VCEO) | 30 | V |
| Emitter-Collector Voltage (VECO) | 5 | V |
| Collector Current (IC) | 50 | mA |
| Response Time (Rise/Fall) | 3 / 5 | ??s |
| Dark Current | 50 | nA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.4 | V |
| Operating Temperature Range | -55 to +100 | ??C |
AEDR-8723-102 Key Features
- Optimized spectral sensitivity at 870 nm: Enables precise detection of infrared signals, improving accuracy in optical communication and sensor systems.
- Fast response times (3 ??s rise, 5 ??s fall): Supports high-speed switching applications, crucial for dynamic industrial controls and data transmission.
- Low dark current (50 nA): Minimizes noise, enhancing signal integrity and system reliability in low-light or background conditions.
- High collector current capacity (50 mA): Allows integration into circuits requiring robust current handling without additional amplification.
- Compact and rugged package: Facilitates easy PCB layout and withstands harsh operating environments for long-term durability.
AEDR-8723-102 Advantages vs Typical Alternatives
This phototransistor stands out due to its superior sensitivity at near-infrared wavelengths combined with rapid response times, offering enhanced accuracy and speed over many standard devices. Its low dark current ensures cleaner signal detection, reducing errors in measurement. Additionally, the device’s ability to handle higher collector currents without saturation improves integration flexibility. These advantages contribute to more efficient, reliable optical sensing solutions compared to typical phototransistors in similar applications.
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Typical Applications
- Industrial automation systems requiring precise infrared detection and fast switching for control feedback loops and safety monitoring.
- Optical communication links where accurate and rapid infrared signal reception is essential for data integrity.
- Proximity sensors in robotics and factory equipment to detect object presence or position reliably.
- Consumer electronics needing compact and sensitive infrared receivers, such as remote control units and interactive devices.
AEDR-8723-102 Brand Info
The AEDR-8723-102 is part of a well-established line of infrared phototransistors manufactured by a leading semiconductor provider known for quality and reliability. This product reflects the brand??s commitment to delivering high-performance optoelectronic components tailored to demanding industrial and communication markets. The device benefits from rigorous quality control and extensive technical support, ensuring dependable integration into complex systems. Its proven track record makes it a preferred choice for engineers seeking a robust solution for infrared light detection.
FAQ
What is the operating wavelength range of this phototransistor?
The device is optimized for peak sensitivity at 870 nm, falling within the near-infrared spectrum. This makes it highly effective for applications requiring detection of infrared light around this wavelength, such as optical communication and sensing.
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How does the response time impact system performance?
Fast response times of 3 ??s rise and 5 ??s fall enable the phototransistor to quickly detect changes in infrared light intensity. This is crucial for high-speed data transmission and real-time sensing applications, ensuring minimal signal delay and improved accuracy.
Can this phototransistor handle high current loads?
Yes, it supports a maximum collector current of 50 mA, allowing it to drive circuits directly without requiring additional current amplification, which simplifies design and reduces component count.
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What environmental conditions can the device withstand?
The device operates reliably across a wide temperature range from -55??C to +100??C, making it suitable for industrial environments where temperature fluctuations and harsh conditions are common.
How does low dark current benefit the application?
Low dark current of 50 nA means the phototransistor generates minimal noise when no infrared light is present. This improves the signal-to-noise ratio, leading to more accurate detection and better overall system reliability in low-light conditions.
