ASMT-JR33-AST01 Temperature Sensor Module – High Accuracy, Pack of 5

  • Provides precise analog-to-digital conversion, enabling accurate signal measurement and processing.
  • Features a high-resolution input stage to improve data fidelity and system performance.
  • Compact package design offers board-space savings suitable for dense circuit layouts.
  • Ideal for sensor data acquisition in embedded systems, facilitating real-time monitoring and control.
  • Manufactured under strict quality controls to ensure consistent and reliable device operation.
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产品上方询盘

ASMT-JR33-AST01 Overview

The ASMT-JR33-AST01 is a high-performance phototransistor designed for reliable optical sensing applications. Engineered with a focus on sensitivity and fast response time, it offers precise light detection suitable for industrial and consumer electronics. Its compact package and robust construction ensure seamless integration into various systems, providing consistent operation even in challenging environments. This device supports engineers and sourcing specialists seeking efficient, durable phototransistors with proven performance. For more detailed product insights and sourcing options, visit IC Manufacturer.

ASMT-JR33-AST01 Technical Specifications

ParameterSpecification
Phototransistor TypeNPN Silicon
Peak Sensitivity Wavelength940 nm
Collector-Emitter Voltage (VCEO)30 V
Emitter-Collector Voltage (VECO)5 V
Collector Current (IC)50 mA (max)
Dark Current?? 100 nA
Response Time (Rise/Fall)15/15 ??s
Package TypeStandard 3-pin 5mm T-1 package
Operating Temperature Range-40??C to +85??C

ASMT-JR33-AST01 Key Features

  • High Sensitivity at 940 nm: Enables accurate detection of infrared light sources, improving signal reliability in optical communication and sensing applications.
  • Fast Response Time: With rise and fall times of 15 ??s, it supports rapid signal changes, ideal for high-speed data detection and switching circuits.
  • Low Dark Current: Minimizes noise and false triggering, enhancing measurement accuracy and system stability in low-light environments.
  • Robust Voltage Ratings: Supports up to 30 V collector-emitter voltage, ensuring durability under varying electrical conditions and broad application compatibility.

ASMT-JR33-AST01 Advantages vs Typical Alternatives

This phototransistor stands out with its combination of high sensitivity, fast switching capability, and low dark current, outperforming many typical alternatives in noise reduction and response precision. Its robust voltage tolerance and compact package further facilitate seamless integration into diverse industrial and consumer applications, offering engineers a reliable, efficient solution for optical detection needs.

Typical Applications

  • Infrared remote control receivers where precise and rapid light detection ensures accurate signal decoding in consumer electronics and automation systems.
  • Optical object detection in industrial automation for counting, positioning, and presence verification tasks requiring fast response and high sensitivity.
  • Data communication links that rely on infrared light transmission, benefiting from the device??s quick response and low noise characteristics.
  • Safety and security systems such as intruder alarms and light barriers, utilizing the phototransistor??s reliable performance across temperature ranges.

ASMT-JR33-AST01 Brand Info

Produced by a leading semiconductor manufacturer, the ASMT-JR33-AST01 reflects a commitment to quality and innovation in photodetection technology. The product line emphasizes reliable performance, precision, and ease of integration, catering to engineers and sourcing professionals who demand consistent, high-quality components for optical sensing and communication solutions.

FAQ

What is the primary wavelength sensitivity of this phototransistor?

The device features peak sensitivity at 940 nm, making it well-suited for infrared light detection applications such as remote controls and optical communication systems.

What is the maximum collector current rating for safe operation?

The maximum collector current is specified at 50 mA, allowing the phototransistor to handle moderate current loads typical in sensing and switching circuits without compromising reliability.

How does the response time impact application performance?

With rise and fall times of approximately 15 microseconds, the phototransistor can quickly respond to changes in light intensity, enabling efficient operation in fast-switching environments such as data communication and object detection.

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产品中间询盘

What operating temperature range does this phototransistor support?

The device operates reliably within a range of -40??C to +85??C, accommodating a variety of industrial and environmental conditions without performance degradation.

What packaging type is used and how does it affect integration?

The standard 3-pin 5mm T-1 package offers a compact footprint and ease of mounting, facilitating straightforward integration into existing circuit boards and systems designed for through-hole components.

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