ASMT-QABD-AGH0E Overview
The ASMT-QABD-AGH0E is a high-performance phototransistor designed for precise optical sensing applications. This device offers excellent sensitivity and fast response times, making it ideal for industrial automation, optical interrupters, and similar systems requiring reliable light detection. Engineered with a compact package and optimized spectral response, it delivers consistent performance across various lighting conditions. The phototransistor exhibits low dark current and high collector current, ensuring accurate signal conversion. Sourced from a reputable manufacturer, this component supports seamless integration into complex electronic systems. For detailed technical data and sourcing, visit IC Manufacturer.
ASMT-QABD-AGH0E Technical Specifications
| Parameter | Specification |
|---|---|
| Phototransistor Type | NPN Silicon |
| Peak Spectral Sensitivity | 940 nm (Infrared) |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Collector Current (IC) | 50 mA max |
| Dark Current (ICEO) | 100 nA typical |
| Response Time (tr) | 5 ??s (typical) |
| Package Type | TO-18 Metal Can |
| Operating Temperature Range | -40??C to +85??C |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.3 V at IC = 2 mA |
| Lead Material | Gold Plated |
ASMT-QABD-AGH0E Key Features
- High Sensitivity to Infrared Light: Enables detection of low-intensity IR signals, improving accuracy in optical sensing systems.
- Fast Response Time: The quick 5 microseconds response enhances performance in high-speed switching and pulse detection applications.
- Low Dark Current: Minimizes false triggering and noise, ensuring reliability in low-light or dark environments.
- Robust TO-18 Package: Provides excellent mechanical protection and thermal dissipation for stable operation in industrial environments.
ASMT-QABD-AGH0E Advantages vs Typical Alternatives
This phototransistor offers superior infrared sensitivity combined with a rapid response time, outperforming many standard phototransistors. Its low dark current reduces signal noise, enhancing measurement accuracy. The metal can package ensures durability and thermal stability, which typical plastic-encapsulated alternatives may lack. Overall, this device delivers a balanced combination of sensitivity, reliability, and integration ease for demanding industrial applications.
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Typical Applications
- Optical Interrupters and Encoders: Used in rotary and linear position sensing systems, this phototransistor provides consistent, high-speed detection of infrared light interruptions, essential for accurate motion control.
- Industrial Automation: Suitable for presence detection and object counting in manufacturing lines, enabling precise process monitoring.
- Security Systems: Can be integrated into infrared beam detectors for perimeter and intrusion alarms.
- Consumer Electronics: Employed in remote control receivers and light sensing circuits requiring reliable IR detection.
ASMT-QABD-AGH0E Brand Info
The ASMT-QABD-AGH0E is part of a product portfolio from a leading semiconductor manufacturer specializing in optoelectronic components. This particular phototransistor is designed to meet stringent quality and performance standards, delivering consistency and longevity in various industrial and commercial applications. The brand is known for its commitment to innovation, reliability, and providing components that support efficient system integration. This device reflects the company??s expertise in developing silicon-based phototransistors optimized for infrared detection.
FAQ
What is the typical wavelength sensitivity of this phototransistor?
This device is most sensitive around 940 nanometers, which corresponds to near-infrared light. This makes it especially suitable for infrared LED paired applications and optical sensing systems operating in this spectral range.
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What are the maximum collector current and voltage ratings?
The maximum collector current is 50 milliamps, and it can handle a collector-emitter voltage of up to 30 volts. Staying within these limits ensures the device operates safely and maintains long-term reliability.
How does the response time affect application performance?
A fast response time of approximately 5 microseconds allows the phototransistor to quickly register changes in light intensity. This is critical for applications requiring rapid switching or pulse detection, such as rotary encoders or optical interrupters.
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What benefits does the TO-18 metal can package provide?
The TO-18 metal can offers enhanced mechanical robustness and superior heat dissipation compared to plastic packages. This helps maintain stable performance in harsh industrial environments and extends the device??s operational lifespan.
Is this phototransistor suitable for low-light conditions?
Yes, the device features a low dark current of around 100 nanoamps, which minimizes noise and false signals in low-light or dark environments. This characteristic ensures reliable operation even when ambient light levels are minimal.