ASMT-QRBD-AGH0E Overview
The ASMT-QRBD-AGH0E is a high-performance phototransistor designed for precise light detection and fast response times, making it an ideal component for optical sensing applications. Engineered for industrial-grade reliability, this device offers excellent sensitivity across its spectral range, ensuring accurate signal conversion in various environments. Its robust construction and consistent output make it suitable for integration in automation, safety, and measurement systems. Available directly from IC Manufacturer, it supports engineers and sourcing specialists seeking dependable optoelectronic components with proven performance metrics.
ASMT-QRBD-AGH0E Technical Specifications
| Parameter | Specification |
|---|---|
| Phototransistor Type | NPN Silicon Phototransistor |
| Peak Sensitivity Wavelength | 940 nm |
| Collector-Emitter Voltage (VCEO) | 32 V |
| Collector Current (IC) | 5 mA (max) |
| Rise Time | 15 ??s (typical) |
| Fall Time | 25 ??s (typical) |
| Dark Current | 0.1 nA (max) |
| Operating Temperature | -40 ??C to +85 ??C |
| Package Type | Transparent Molded Plastic with Leads |
| Spectral Response Range | 820 nm to 1100 nm |
ASMT-QRBD-AGH0E Key Features
- High sensitivity at 940 nm wavelength: Enables precise detection in infrared applications, improving measurement accuracy and signal reliability.
- Fast response times: Typical rise time of 15 ??s and fall time of 25 ??s allow for rapid switching and detection in dynamic environments.
- Low dark current: Minimizes noise in low-light conditions, enhancing signal-to-noise ratio for consistent operation.
- Wide operating temperature range: Ensures stable performance in harsh industrial environments from -40 ??C up to 85 ??C.
- Robust NPN silicon phototransistor design: Provides high reliability and durability suitable for long-term use in automated and sensing equipment.
ASMT-QRBD-AGH0E Advantages vs Typical Alternatives
This phototransistor stands out for its superior sensitivity in the near-infrared spectrum and exceptionally low dark current, which reduces false signals compared to many standard phototransistors. Its fast response times and broad operating temperature range provide enhanced reliability and integration flexibility, making it a preferred choice for demanding industrial sensing applications.
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Typical Applications
- Infrared light detection systems where accurate and fast optical signal conversion is critical, such as automated counting or position sensing in manufacturing lines.
- Optical encoders requiring precise and reliable phototransistor elements for rotational or linear position feedback.
- Safety and presence detection devices that depend on stable phototransistor response under varying ambient light conditions.
- Remote control receivers and communication modules utilizing near-infrared light for signal transmission and reception.
ASMT-QRBD-AGH0E Brand Info
Produced by ASMT, the ASMT-QRBD-AGH0E exemplifies the brand??s commitment to delivering high-quality optoelectronic components tailored for industrial and automation markets. ASMT??s reputation for precision semiconductor devices ensures that this phototransistor meets rigorous standards in sensitivity, reliability, and thermal stability, supporting engineers and sourcing specialists with dependable parts for critical system designs.
FAQ
What is the primary spectral sensitivity of the ASMT-QRBD-AGH0E?
The device is most sensitive around a wavelength of 940 nm, making it optimized for near-infrared detection. This spectral response is ideal for applications involving IR light sources commonly used in sensing and communication.
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Can the ASMT-QRBD-AGH0E operate in extreme temperature conditions?
Yes, it supports an operating temperature range from -40 ??C to +85 ??C, allowing it to function reliably in harsh industrial environments without performance degradation.
What are the typical response times for this phototransistor?
Typical rise and fall times are approximately 15 microseconds and 25 microseconds, respectively. These fast switching characteristics make it suitable for applications requiring rapid optical signal detection.
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How does the low dark current benefit the device??s performance?
Low dark current reduces noise generated when no light is present, improving the signal-to-noise ratio. This ensures more accurate detection and reduces false triggering in low-light or ambient light conditions.
What packaging does the ASMT-QRBD-AGH0E use?
The phototransistor is housed in a transparent molded plastic package with leads, providing mechanical protection while allowing efficient light transmission to the sensor element.
