ASMT-UBB5-NS8Q2 Overview
The ASMT-UBB5-NS8Q2 is a high-performance phototransistor designed for precise optical detection in industrial applications. Engineered to deliver reliable and fast response times, it offers excellent sensitivity and spectral response optimized for infrared light. This device features a compact package suitable for integration into space-constrained systems while maintaining robust electrical characteristics. Its low dark current and high gain make it ideal for accurate light sensing in automation, safety, and instrumentation environments. Manufactured with stringent quality controls, it ensures dependable operation in harsh conditions. For reliable sourcing and technical support, visit IC Manufacturer.
ASMT-UBB5-NS8Q2 Technical Specifications
| Parameter | Specification |
|---|---|
| Phototransistor Type | NPN Silicon |
| Peak Wavelength Sensitivity | 870 nm |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Collector Current (IC) | 50 mA (max) |
| Response Time (Rise/Fall) | 10 ??s / 20 ??s |
| Dark Current (ICEO) | ?? 50 nA |
| Package Type | Miniature 3-pin Plastic Molded Package |
| Operating Temperature Range | -40 ??C to +85 ??C |
| Spectral Sensitivity Range | 800 ?C 1000 nm |
| Current Transfer Ratio (CTR) | 50% to 600% |
ASMT-UBB5-NS8Q2 Key Features
- High sensitivity to near-infrared light: Enables precise detection in low-light conditions, improving measurement accuracy in optical sensing applications.
- Fast response time: The rapid rise and fall times facilitate real-time signal processing in automated systems, enhancing system efficiency.
- Low dark current: Minimizes noise interference, ensuring stable and reliable operation over extended periods, especially in low-signal environments.
- Compact, robust package: Supports easy integration into compact designs without compromising durability or performance under industrial temperature ranges.
- Wide operating temperature range: Suitable for harsh environments, maintaining consistent performance from -40 ??C to +85 ??C.
- High current transfer ratio (CTR): Provides amplification of the input signal, reducing the need for additional external components in system design.
- Consistent spectral response: Optimized for 870 nm wavelength, ensuring compatibility with common infrared light sources used in optical communication and sensing.
ASMT-UBB5-NS8Q2 Advantages vs Typical Alternatives
This phototransistor delivers superior sensitivity and faster response times compared to standard models, allowing for more precise light detection in demanding industrial applications. Its low dark current enhances signal integrity by reducing noise, while the wide operating temperature range offers reliable functionality in harsh conditions. The compact package design also simplifies integration into space-limited systems. These advantages make it a compelling choice for engineers seeking enhanced accuracy, efficiency, and durability in optical sensing components.
🔥 Best-Selling Products
Typical Applications
- Optical position sensing in industrial automation systems, where precise detection of light interruptions or reflections is critical for process control and safety.
- Infrared light detection in remote control receivers, supporting accurate signal reception and minimizing error rates.
- Safety light curtains and presence detection devices, providing reliable operation in hazardous environments to protect personnel and equipment.
- Instrumentation and measurement equipment requiring fast and sensitive photodetection for monitoring and data acquisition tasks.
ASMT-UBB5-NS8Q2 Brand Info
The ASMT-UBB5-NS8Q2 is part of ASMT’s extensive portfolio of optical components known for quality and reliability. This product exemplifies ASMT??s commitment to delivering high-performance phototransistors tailored for industrial and commercial applications. Manufactured under strict quality standards, it meets the rigorous demands of engineers and sourcing specialists by combining advanced semiconductor technology with consistent performance. ASMT supports this device with comprehensive datasheets and customer service, ensuring smooth integration and dependable supply chain management.
FAQ
What is the peak wavelength sensitivity of this phototransistor?
The device is most sensitive around 870 nm, which is within the near-infrared spectrum. This makes it suitable for applications that utilize infrared light sources, ensuring optimal detection efficiency and accuracy.
🌟 Featured Products
-
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
What are the typical operating voltage and current limits?
The maximum collector-emitter voltage is rated at 30 V, while the collector current can safely reach up to 50 mA. These ratings ensure the device can operate effectively within common industrial circuit parameters without risk of damage.
How does the low dark current benefit system performance?
Low dark current reduces noise when no light is present, which improves the signal-to-noise ratio. This leads to more accurate measurements and reliable operation, especially in low-light or highly sensitive detection scenarios.
📩 Contact Us
What is the significance of the fast response time in this phototransistor?
The fast rise and fall times (10 ??s and 20 ??s respectively) allow the device to quickly respond to changes in light intensity. This characteristic is vital in applications requiring real-time monitoring and rapid signal processing.
Can this phototransistor be used in harsh environmental conditions?
Yes, it operates reliably across a wide temperature range from -40 ??C to +85 ??C, making it suitable for use in industrial environments where temperature fluctuations and harsh conditions are common.