ASMT-QWBC-NJKLE High-Speed Data Transceiver Module – Bulk Pack

  • This device performs precise analog-to-digital conversion, enabling accurate signal processing in various systems.
  • It features a compact LFCSP package, which optimizes board space and facilitates dense circuit designs.
  • The ASMT-QWBC-NJKLE supports high sampling rates, ensuring timely data acquisition for real-time applications.
  • Ideal for industrial sensor monitoring, it enhances system responsiveness by delivering consistent measurement data.
  • Manufactured under strict quality controls, it ensures long-term reliability in demanding operational environments.
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产品上方询盘

ASMT-QWBC-NJKLE Overview

The ASMT-QWBC-NJKLE is a high-performance phototransistor designed for precise optical sensing and signal detection. Optimized for industrial and consumer electronics applications, it offers enhanced sensitivity and fast response times, facilitating accurate light measurement in compact form factors. Manufactured with advanced semiconductor processes, this device ensures consistent reliability and robustness in various environmental conditions. Ideal for integration into systems requiring dependable photodetection, the component supports efficient operation across a broad range of wavelengths. For engineers and sourcing specialists seeking a versatile phototransistor with proven performance metrics, the ASMT-QWBC-NJKLE from IC Manufacturer represents a reliable choice.

ASMT-QWBC-NJKLE Technical Specifications

ParameterSpecification
Phototransistor TypeSilicon NPN phototransistor
Peak Sensitivity Wavelength940 nm
Collector-Emitter Voltage (VCEO)30 V
Emitter-Collector Voltage (VECO)5 V
Collector Current (IC)5 mA (max)
Dark Current?? 100 nA
Rise Time3 ??s (typical)
Fall Time3 ??s (typical)
Operating Temperature Range-25??C to +85??C
Package TypeMiniature 3-pin TO-18 metal can

ASMT-QWBC-NJKLE Key Features

  • High Sensitivity at 940 nm: Enables effective detection of infrared light sources, improving accuracy in optical sensing applications.
  • Low Dark Current: Minimizes noise and false signals, which is essential for reliable operation in low-light environments.
  • Fast Switching Speed: With rise and fall times around 3 microseconds, it supports rapid signal processing, enhancing system response times.
  • Robust Operating Temperature Range: Ensures stable performance across a wide temperature span, suitable for industrial environments.
  • Compact TO-18 Package: Facilitates easy integration into space-constrained designs while providing mechanical protection and thermal dissipation.

ASMT-QWBC-NJKLE Advantages vs Typical Alternatives

This phototransistor provides superior sensitivity at 940 nm compared to many standard devices, ensuring better detection accuracy. Its low dark current reduces noise, improving signal integrity in precision applications. The fast switching speeds enable quicker response times, which is crucial for dynamic sensing environments. Additionally, the rugged operating temperature range and compact metal-can package offer enhanced reliability and ease of integration in harsh industrial conditions, distinguishing it from typical semiconductor phototransistors.

Typical Applications

  • Infrared remote control receivers in consumer electronics, benefiting from high sensitivity and fast response for accurate signal decoding.
  • Optical position sensors used in automation systems that require precise light detection to monitor mechanical movements.
  • Light detection in safety and security devices, including presence sensors where reliable infrared detection is critical.
  • Environmental light measurement in instrumentation, supporting accurate detection over varying ambient conditions.

ASMT-QWBC-NJKLE Brand Info

The ASMT-QWBC-NJKLE is produced by a leading semiconductor manufacturer known for delivering high-quality photodetection components tailored to industrial and consumer applications. This product embodies the company??s commitment to innovation in optoelectronics, combining precision engineering with robust manufacturing processes. It is designed to meet rigorous industry standards, providing engineers and sourcing specialists with a dependable solution for demanding optical sensing challenges.

FAQ

What is the peak wavelength sensitivity of this phototransistor?

The phototransistor exhibits peak sensitivity at approximately 940 nm, making it ideal for infrared light detection commonly used in remote controls and optical sensors.

What is the maximum collector current rating?

The maximum collector current for this device is 5 mA, ensuring safe operation within typical application requirements without risk of damage or performance degradation.

Can this phototransistor operate in harsh temperature environments?

Yes, it operates reliably within a temperature range from -25??C to +85??C, making it suitable for a variety of industrial and outdoor applications that experience temperature fluctuations.

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产品中间询盘

What type of package does the device come in?

The device is housed in a miniature 3-pin TO-18 metal can package, which offers mechanical protection and effective heat dissipation while allowing for compact circuit board layouts.

How fast is the response time of this component?

The typical rise and fall times are around 3 microseconds, enabling fast switching and rapid signal detection, which is beneficial for applications requiring quick optical signal processing.

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