ASMT-JW32-NWY01 Overview
The ASMT-JW32-NWY01 is a high-performance photodiode optimized for precision optical sensing applications. Designed to deliver reliable photoelectric conversion with a spectral sensitivity peak matched to common light sources, this device supports a wide range of industrial and consumer electronics uses. Featuring a compact package and robust electrical characteristics, it offers consistent performance across varying environmental conditions. Its low dark current and fast response time enable accurate detection in low-light scenarios, making it ideal for integration in automation, optical communication, and measurement systems. Available through IC Manufacturer, this photodiode meets demanding industrial standards while facilitating efficient design integration.
ASMT-JW32-NWY01 Technical Specifications
| Parameter | Specification |
|---|---|
| Photodiode Type | PIN photodiode |
| Active Area | 3.2 mm2 |
| Peak Sensitivity Wavelength | 940 nm |
| Dark Current (typical) | 2 nA at 5 V bias |
| Capacitance | 7 pF at 5 V reverse bias |
| Response Time (Rise/Fall) | ?? 10 ns |
| Reverse Voltage | 10 V max |
| Package Type | TO-18 metal can |
ASMT-JW32-NWY01 Key Features
- High spectral sensitivity at 940 nm: Optimized for near-infrared detection, enabling precise optical measurement and communication performance.
- Low dark current: Minimizes noise for enhanced signal-to-noise ratio, critical in low-light or high-precision sensing environments.
- Fast response time: Supports rapid signal detection with rise and fall times below 10 ns, suitable for high-speed optical applications.
- Compact TO-18 metal can package: Provides robust mechanical protection and excellent thermal dissipation for reliable operation in industrial settings.
- Low junction capacitance: Enables faster switching speeds and improved frequency response, facilitating integration in high-frequency circuits.
ASMT-JW32-NWY01 Advantages vs Typical Alternatives
This photodiode offers superior sensitivity at the 940 nm wavelength compared to standard silicon photodiodes, enhancing accuracy in near-infrared detection tasks. Its low dark current and fast response time improve measurement reliability and speed, reducing signal distortion and noise common in typical devices. The rugged TO-18 package ensures durability and better thermal management, addressing reliability issues often encountered with plastic-packaged alternatives. These factors collectively deliver enhanced performance for precision sensing and communication applications.
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Typical Applications
- Near-infrared optical sensing in industrial automation systems, enabling accurate detection of light signals for process control and monitoring.
- Optical communication receivers requiring fast response times and low noise for high data-rate transmission.
- Proximity sensors in consumer electronics and robotics for reliable object detection and distance measurement.
- Medical instrumentation applications where precise photodetection at 940 nm wavelength is essential for diagnostics and monitoring.
ASMT-JW32-NWY01 Brand Info
The ASMT-JW32-NWY01 is part of a specialized photodiode product line designed and manufactured by industry-leading semiconductor technology providers. This device embodies advanced photodetection technology tailored for high accuracy and reliability in demanding industrial and commercial applications. The manufacturer focuses on delivering components with stringent quality control and consistent performance, backed by comprehensive datasheets and application support. The product??s design emphasizes ease of integration, long-term stability, and compatibility with a broad array of optical systems, reinforcing its position as a trusted solution in the electronics and sensor markets.
FAQ
What is the peak wavelength sensitivity of this photodiode?
The photodiode exhibits peak sensitivity at 940 nm, optimized for near-infrared detection. This wavelength is commonly used in optical communication and sensing applications, making the device suitable for systems requiring precise response in this spectral region.
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What are the typical dark current values and why are they important?
The device typically has a dark current of 2 nA at 5 V reverse bias. Low dark current is important because it reduces noise, allowing for more accurate detection of low-intensity light signals, which is essential in high-precision sensing applications.
What packaging does the device use and what are its benefits?
The photodiode is housed in a TO-18 metal can package. This packaging offers superior mechanical robustness and thermal dissipation compared to plastic packages, ensuring reliable performance in industrial environments and extended device lifespan.
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Can this photodiode be used in high-speed optical communication?
Yes, with rise and fall times of 10 ns or less, the device supports fast signal detection, making it suitable for high-speed optical communication systems where rapid response is critical.
What is the maximum reverse voltage rating for safe operation?
The maximum recommended reverse voltage is 10 V. Operating within this limit ensures device reliability and prevents breakdown or degradation of the photodiode??s performance characteristics.
