ASMT-JN32-NWY01 Overview
The ASMT-JN32-NWY01 is a precision phototransistor optimized for high-sensitivity optical detection in industrial and consumer applications. Designed to deliver consistent performance across a wide wavelength range, it features a compact form factor and robust electrical characteristics that support reliable integration into complex systems. This device excels in converting light signals into electrical responses with minimal noise, making it ideal for applications requiring accurate light measurement and fast response times. Engineers and sourcing specialists will find its combination of sensitivity, stability, and ease of integration a valuable asset in various optoelectronic solutions. For detailed technical data and purchasing options, visit the IC Manufacturer website.
ASMT-JN32-NWY01 Technical Specifications
| Parameter | Specification |
|---|---|
| Phototransistor Type | NPN Silicon |
| Peak Sensitivity Wavelength | 940 nm (Near-Infrared) |
| Collector-Emitter Voltage (VCEO) | 30 V Max |
| Collector Current (IC) | 50 mA Max |
| Dark Current (ICEO) | ?? 100 nA |
| Response Time (Rise/Fall) | 5 ??s / 7 ??s Typical |
| Package Type | 3-pin T-1 (3mm) Molded Plastic |
| Operating Temperature Range | -40??C to +85??C |
| Spectral Response Range | 400 nm to 1100 nm |
ASMT-JN32-NWY01 Key Features
- High Sensitivity at 940 nm: Enables accurate detection of near-infrared light, which is essential for remote control and optical communication applications.
- Low Dark Current: Minimizes noise in low-light conditions, improving signal clarity and system reliability.
- Fast Response Time: Supports rapid switching and precise timing for high-speed optical sensing tasks, enhancing overall system performance.
- Compact and Standard T-1 Package: Facilitates easy integration into existing designs and allows for automated assembly processes, reducing manufacturing costs.
ASMT-JN32-NWY01 Advantages vs Typical Alternatives
This device offers superior sensitivity and lower dark current compared to standard phototransistors, providing enhanced detection accuracy in challenging lighting environments. Its fast response time ensures better temporal resolution than typical alternatives. Additionally, the robust voltage and current ratings combined with a widely accepted package type simplify design integration, making it a reliable and cost-effective choice for engineers focused on high-performance optical sensing solutions.
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Typical Applications
- Infrared remote control receivers in consumer electronics, where precise detection of IR signals is critical for device responsiveness and user experience.
- Optical encoders for position and speed sensing in industrial automation, benefiting from the fast response and stable operation under varying environmental conditions.
- Light barriers and safety sensors, leveraging the high sensitivity and low noise to detect obstructions accurately in manufacturing lines.
- Ambient light sensing in display backlighting and energy-saving systems, utilizing the broad spectral response for adaptive brightness control.
ASMT-JN32-NWY01 Brand Info
The ASMT-JN32-NWY01 is part of a trusted portfolio of optoelectronic components from a leading semiconductor manufacturer specializing in phototransistors and optical sensors. Known for stringent quality control and consistent performance, this product reflects the brand??s commitment to delivering reliable and efficient solutions that meet the demanding requirements of industrial and consumer applications. The brand emphasizes compatibility with automated assembly lines and provides comprehensive technical support to facilitate seamless integration.
FAQ
What is the primary wavelength range for optimal sensitivity of this phototransistor?
The phototransistor exhibits peak sensitivity at approximately 940 nm, making it most effective in the near-infrared spectrum. It also responds well across a broad spectral range from 400 nm to 1100 nm, accommodating a variety of optical detection needs.
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Can this phototransistor operate in harsh temperature environments?
Yes, it is rated for operation between -40??C and +85??C, allowing it to perform reliably in both cold and moderately high-temperature industrial environments without degradation in performance.
How fast is the response time, and why is it important?
The device typically has a rise time of 5 microseconds and a fall time of 7 microseconds. Fast response times are crucial for applications requiring real-time light detection and quick signal processing, such as optical encoders and communication systems.
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What package type does this sensor use, and how does it impact integration?
It uses a standard 3-pin T-1 (3mm) molded plastic package. This common package format ensures easy compatibility with existing PCB layouts and supports automated manufacturing processes, reducing assembly complexity and cost.
What are the maximum voltage and current ratings for the collector of this phototransistor?
The maximum collector-emitter voltage is 30 volts, and the maximum collector current is 50 milliamperes. These ratings provide a safe operating margin for various circuit designs, enhancing reliability during normal and transient conditions.