MMRF1007HSR5 Overview
The MMRF1007HSR5 is a high-performance RF transistor designed for amplification in wireless communication systems. It offers reliable gain and linearity across a broad frequency range, making it suitable for demanding industrial and commercial applications. This device delivers robust output power with excellent efficiency, ensuring optimized performance in power amplifier stages. Its rugged construction supports stable operation under varying environmental conditions. Engineers and sourcing specialists will find this transistor a valuable component for enhancing signal integrity and boosting transmitter performance. For detailed technical support and procurement, visit IC Manufacturer.
MMRF1007HSR5 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Frequency Range | 0.8 ?C 2.5 | GHz |
| Output Power (P1dB) | 28 | dBm |
| Gain (Typical) | 13 | dB |
| Operating Voltage (VCE) | 12 | V |
| Quiescent Collector Current (ICQ) | 90 | mA |
| Package Type | SMT (Surface Mount Technology) | ?C |
| Noise Figure | 3.5 | dB |
| Operating Temperature Range | -40 to +85 | ??C |
MMRF1007HSR5 Key Features
- Wide Frequency Coverage: Supports operations from 0.8 GHz to 2.5 GHz, enabling versatile usage across multiple RF bands.
- High Power Output: Delivers up to 28 dBm output power, ensuring strong signal transmission in power amplifier stages.
- Consistent Gain Performance: Provides a typical gain of 13 dB, enhancing signal amplification with minimal distortion.
- Low Noise Figure: Maintains a noise figure around 3.5 dB, improving signal-to-noise ratio for clearer communication signals.
- Robust Thermal Stability: Operates reliably within a broad temperature range from -40??C to +85??C, ensuring stable performance in harsh environments.
- Compact SMT Package: Facilitates easy integration into modern circuit boards while minimizing footprint for high-density designs.
- Optimized Quiescent Current: With a quiescent collector current of 90 mA, balances power consumption and linearity for efficient system operation.
MMRF1007HSR5 Advantages vs Typical Alternatives
This transistor stands out by combining high output power with low noise and stable gain across a wide frequency range. Its robust thermal performance and compact SMT packaging make it advantageous for applications requiring reliable operation under varying conditions. Compared to typical alternatives, it offers an efficient balance of power consumption, linearity, and integration flexibility, supporting improved system performance and reduced design complexity.
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Typical Applications
- Wireless communication equipment, including base stations and repeaters, where high linearity and power output are essential for signal amplification and transmission integrity.
- RF power amplifiers in industrial telemetry systems, requiring reliable gain and noise performance for accurate data transmission.
- Commercial radio transmitters that benefit from stable operation across multiple frequency bands and harsh environmental conditions.
- Test and measurement instruments needing consistent RF gain and low noise figure for precise signal analysis.
MMRF1007HSR5 Brand Info
The MMRF1007HSR5 is produced by a leading supplier specialized in RF semiconductor solutions, known for delivering components that meet stringent performance and reliability standards. Engineered with advanced semiconductor technology, this transistor reflects the brand??s commitment to innovation and quality. Its design supports seamless integration into diverse RF applications, backed by comprehensive technical support and global availability, making it a trusted choice for engineers and sourcing professionals alike.
FAQ
What frequency range does the transistor support?
The device operates effectively within a frequency range of 0.8 GHz to 2.5 GHz. This broad coverage allows it to be used in various wireless communication systems and RF applications requiring versatile frequency handling.
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What is the typical gain provided by this transistor?
The typical gain is approximately 13 dB. This level of gain ensures sufficient signal amplification, which is critical for maintaining signal strength and quality in RF power amplifier stages.
How does the device perform under different temperature conditions?
The transistor is designed to function reliably across a temperature range from -40??C to +85??C. This wide operating temperature range ensures stable performance in both industrial and commercial environments subject to temperature fluctuations.
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What packaging type is used for the transistor?
The component is housed in a surface mount technology (SMT) package. This compact package type supports easy integration into modern circuit boards and helps reduce overall device footprint.
What makes this transistor suitable for power amplifier applications?
Its combination of high output power (up to 28 dBm), consistent gain, low noise figure, and thermal stability makes it well-suited for power amplifier stages. These features enhance signal transmission efficiency and reliability, which are essential in power amplification.
