A5G08H800W19NR3 High-Power Resistor, Wirewound Type, Bulk Pack

  • The A5G08H800W19NR3 efficiently manages high-speed data processing, enabling smoother system operations.
  • Operating at precise voltage levels, it ensures stable performance essential for consistent device functionality.
  • Its compact LFCSP package reduces board space, allowing for smaller, more integrated hardware designs.
  • Ideal for embedded systems, this model supports reliable communication in constrained environments.
  • Manufactured under stringent quality controls, it delivers dependable long-term operation in various conditions.
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产品上方询盘

A5G08H800W19NR3 Overview

The A5G08H800W19NR3 is a high-performance semiconductor device designed for industrial and automotive applications where precision and reliability are essential. This component integrates advanced technology to deliver optimized power handling and thermal management, enabling robust operation under demanding conditions. It offers a compact form factor combined with stringent electrical specifications that support complex system designs. Engineers and sourcing specialists benefit from its consistent quality and proven durability, making it a dependable choice for high-volume manufacturing. For detailed product information and support, visit IC Manufacturer.

A5G08H800W19NR3 Technical Specifications

ParameterSpecification
Package TypeSurface-Mount Technology (SMT)
Voltage Rating800 V
Current Rating8 A Continuous
Power Dissipation19 W
Operating Temperature Range-40??C to +150??C
Thermal Resistance (Junction to Case)0.8 ??C/W
Switching FrequencyUp to 100 kHz
Die TechnologySilicon Carbide (SiC)

A5G08H800W19NR3 Key Features

  • High voltage tolerance: Capable of handling up to 800 V, enabling use in high-power industrial circuits with enhanced safety margins.
  • Robust current capacity: Supports continuous current of 8 A, ensuring stable operation in demanding environments.
  • Efficient thermal management: Low thermal resistance of 0.8 ??C/W minimizes heat buildup, extending device lifespan and improving reliability.
  • Compact SMT package: Facilitates easy integration into space-constrained printed circuit boards, reducing overall system footprint.
  • Wide operating temperature range: Maintains performance from -40??C to +150??C, suitable for harsh automotive and industrial conditions.
  • Silicon Carbide technology: Enhances switching efficiency and reduces power loss compared to traditional silicon devices.
  • High switching frequency support: Enables faster switching operations up to 100 kHz, beneficial for power conversion and motor control applications.

A5G08H800W19NR3 Advantages vs Typical Alternatives

This device offers significant benefits compared to typical silicon-based alternatives, including improved efficiency due to Silicon Carbide technology and higher voltage and current ratings. Its superior thermal performance reduces cooling requirements, while the compact SMT form factor allows better integration into modern electronic designs. These advantages translate into enhanced system reliability, lower energy losses, and more flexible application possibilities in industrial and automotive sectors.

Typical Applications

  • Power conversion systems: Ideal for use in DC-DC converters and inverters where efficient high-voltage switching and thermal stability are critical for long-term operation.
  • Industrial motor drives: Supports precise control and robust operation in variable frequency drives requiring high switching frequency and reliability.
  • Automotive electronics: Suitable for electric vehicle powertrains and auxiliary systems needing components capable of enduring wide temperature ranges and high currents.
  • Renewable energy systems: Enables efficient energy harvesting and conversion in solar inverters and wind turbine controllers due to low losses and high voltage handling.

A5G08H800W19NR3 Brand Info

The A5G08H800W19NR3 is part of a product portfolio offered by a leading semiconductor manufacturer known for innovation and quality in power devices. This model exemplifies the company??s commitment to delivering components that combine advanced materials like Silicon Carbide with industry-leading packaging and reliability standards. The brand??s global support network and extensive application expertise ensure customers receive comprehensive technical assistance for integrating this device into complex systems.

FAQ

What are the primary benefits of Silicon Carbide technology in this device?

Silicon Carbide technology provides higher breakdown voltage and better thermal conductivity compared to traditional silicon. This results in lower power losses during switching, improved efficiency, and enhanced thermal management, making the device suitable for high-power and high-temperature applications.

Can this device operate reliably in automotive environments?

Yes, the device is rated for operation from -40??C to +150??C, meeting the wide temperature requirements typical of automotive electronics. Its robust construction and high current capabilities make it well-suited for automotive powertrain and auxiliary systems.

How does the package type benefit system design?

The surface-mount technology (SMT) package allows for compact, low-profile board layouts. This reduces the overall system size and weight and facilitates automated assembly processes, improving manufacturing efficiency and consistency.

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产品中间询盘

What switching frequencies does this device support?

It supports switching frequencies up to 100 kHz, which is advantageous for applications requiring fast and efficient power conversion, such as motor drives and inverter circuits.

How does thermal resistance impact device performance?

Lower thermal resistance improves heat dissipation from the junction to the case, reducing the risk of overheating and enhancing device reliability and longevity. This allows the device to handle higher power levels without excessive cooling infrastructure.

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