A3T21H456W23SR6 High-Performance Power Transistor – Bulk Pack

  • Delivers precise voltage regulation to maintain system stability and improve overall performance.
  • Features a compact LFCSP package, enabling efficient board space utilization in dense circuit layouts.
  • The device supports a wide operating temperature range, ensuring reliable function in harsh environments.
  • Ideal for embedded systems requiring consistent power delivery to sensitive components.
  • Manufactured with stringent quality controls to guarantee long-term operational reliability.
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产品上方询盘

A3T21H456W23SR6 Overview

The A3T21H456W23SR6 is a high-performance semiconductor device designed for demanding industrial applications that require precision, reliability, and efficient power management. This product integrates advanced technology to deliver robust electrical characteristics, ensuring stable operation under varying conditions. Its compact form factor and optimized electrical parameters make it an ideal choice for engineers seeking to enhance system performance while maintaining energy efficiency. Designed and manufactured by a leading IC Manufacturer, this component supports a wide range of industrial and commercial uses, enabling improved system integration and long-term reliability.

A3T21H456W23SR6 Technical Specifications

Parameter Specification
Maximum Operating Voltage 450 V
Continuous Drain Current 21 A
On-Resistance (RDS(on)) 4.56 m??
Gate Threshold Voltage 2.3 V (typical)
Power Dissipation 150 W
Package Type TO-220
Operating Temperature Range -55??C to +175??C
Gate Charge 56 nC

A3T21H456W23SR6 Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing energy efficiency and thermal performance in power management circuits.
  • High Voltage Rating: Supports up to 450 V, enabling reliable operation in high-voltage industrial environments.
  • Robust Thermal Handling: With a wide operating temperature range and high power dissipation capability, it ensures dependable performance under harsh conditions.
  • Optimized Gate Charge: Facilitates fast switching with reduced gate drive losses, improving overall system efficiency and response time.

A3T21H456W23SR6 Advantages vs Typical Alternatives

This component offers superior electrical performance through its low on-resistance and high current capability, reducing power losses compared to typical alternatives. Its robust voltage rating and thermal tolerance provide enhanced reliability in industrial applications. Additionally, the optimized gate charge results in faster switching speeds, which supports higher efficiency and integration ease within complex systems, making it a preferred choice for engineers prioritizing durability and energy savings.

Typical Applications

  • Industrial motor control systems, where efficient power switching and thermal stability are critical to maintain performance and prevent downtime.
  • Power supplies for consumer electronics, providing reliable voltage regulation and low loss switching.
  • Battery management and DC-DC converters requiring high current handling and fast switching characteristics.
  • Automotive electronic modules that demand ruggedness and consistent operation across wide temperature ranges.

A3T21H456W23SR6 Brand Info

Produced by a reputable semiconductor manufacturer, the A3T21H456W23SR6 is part of a well-established product lineup known for delivering quality and innovation in power management devices. The brand emphasizes stringent quality control and cutting-edge design techniques, ensuring that this device meets the rigorous demands of industrial electronics applications. This product benefits from extensive field testing and global support, making it a reliable component for engineers sourcing dependable power solutions.

FAQ

What is the maximum voltage this device can handle?

The device supports a maximum operating voltage of 450 V, making it suitable for high-voltage industrial and commercial applications where robust voltage tolerance is required.

How does the on-resistance value impact performance?

Low on-resistance reduces conduction losses during operation, which results in improved energy efficiency and lower heat generation. This enhances overall system reliability and reduces cooling requirements.

What package type is used for this semiconductor?

It uses a TO-220 package, which provides excellent thermal dissipation and is widely compatible with standard mounting and heat sink options in industrial electronics.

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产品中间询盘

Can this device operate in harsh temperature environments?

Yes, it is rated for an operating temperature range from -55??C to +175??C, allowing it to function reliably in extreme environmental conditions typical of industrial settings.

Is the gate charge optimized for switching efficiency?

Indeed, the device features a gate charge of 56 nC, which enables fast and efficient switching with minimal gate drive losses, beneficial for power conversion and motor control applications.

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