MRF1K50GNR5 Overview
The MRF1K50GNR5 is a high-power RF transistor designed for industrial and commercial high-frequency amplifier applications. It delivers robust output power and efficiency in the 50 MHz to 512 MHz frequency range, making it ideal for use in broadcast transmitters, industrial heating, and communication systems. This device supports continuous operation with a strong thermal design that enhances reliability under demanding conditions. Its rugged construction and high gain simplify circuit design, reducing the need for complex matching networks. For sourcing and detailed technical support, visit IC Manufacturer.
MRF1K50GNR5 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 50 MHz to 512 MHz |
| Output Power (CW) | 1000 W (1 kW) |
| Gain | Typically 12 dB |
| Efficiency | Up to 65% |
| Operating Voltage | 28 V DC |
| Package Type | Flange Mount |
| Thermal Resistance (Junction-to-Case) | 0.12 ??C/W |
| Input/Output Impedance | 50 ?? |
| Maximum Operating Temperature | 225 ??C (junction) |
MRF1K50GNR5 Key Features
- High Output Power: Delivers 1 kW continuous wave power, enabling efficient amplification for demanding RF applications.
- Wide Frequency Bandwidth: Operates effectively from 50 MHz to 512 MHz, providing flexibility across multiple RF system designs.
- Excellent Thermal Management: Low thermal resistance package ensures reliable operation and long device life under continuous high-power conditions.
- Robust Gain Characteristics: Provides consistent 12 dB gain, simplifying amplifier stage design and reducing component count.
MRF1K50GNR5 Advantages vs Typical Alternatives
This device offers superior power output and efficiency compared to many typical RF transistors in its class. Its broad frequency range and high gain reduce the complexity of amplifier design, while robust thermal characteristics improve reliability during continuous high-power operation. These attributes contribute to easier integration, better system performance, and lower overall maintenance costs in demanding industrial and broadcast environments.
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Typical Applications
- Broadcast Transmitters: Ideal for high-power RF amplification in FM and VHF transmitters, supporting clear and reliable signal transmission over wide coverage areas.
- Industrial RF Heating: Enables precise and powerful RF energy delivery for processes such as plastic welding, drying, and sealing.
- Communication Infrastructure: Suitable for use in base stations and repeater amplifiers requiring high linearity and output power across broad frequency bands.
- Test and Measurement Equipment: Provides stable high-power RF output necessary for calibration and testing of RF systems and components.
MRF1K50GNR5 Brand Info
The MRF1K50GNR5 is part of a series of RF power transistors developed by a leading semiconductor manufacturer specializing in high-performance RF components. Designed to meet stringent industrial and commercial requirements, this transistor reflects the brand??s commitment to reliability, high efficiency, and ease of integration. The product benefits from extensive quality control and support infrastructure, ensuring consistent performance in critical applications worldwide.
FAQ
What is the typical frequency range for this RF transistor?
This transistor operates effectively from 50 MHz to 512 MHz, covering a wide range of VHF and lower UHF frequencies. This makes it suitable for various RF amplifier applications in broadcasting, communication, and industrial sectors.
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What are the power handling capabilities of this device?
The device delivers continuous wave output power of up to 1000 watts (1 kW). This high power rating allows it to be used in demanding applications requiring robust and reliable RF amplification.
How does the thermal performance impact device reliability?
With a thermal resistance junction-to-case of 0.12 ??C/W, this transistor efficiently dissipates heat generated during operation. Effective thermal management extends device lifespan and maintains stable performance under continuous high-power conditions.
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What packaging type is used for this RF transistor?
The device comes in a flange mount package, which facilitates effective heat sinking and mechanical mounting in high-power RF amplifier assemblies, enhancing thermal and structural reliability.
Can this transistor be used for broadband amplifier designs?
Yes, its wide operating frequency range and stable gain across the band make it well suited for broadband amplifier designs, reducing the need for multiple devices or complex tuning networks in RF systems.
