MRF6V10010NR4 Overview
The MRF6V10010NR4 is a high-power RF transistor designed for broadband linear amplification in industrial and commercial applications. It operates efficiently within the 1.8 to 2.0 GHz frequency range, delivering robust output power and high gain. Its rugged design supports continuous wave and pulsed operation, making it suitable for demanding environments. With a collector supply voltage of 28 V and a maximum output power exceeding 100 W, this transistor offers reliable performance for wireless infrastructure, radar, and other RF power amplification needs. For detailed product support and sourcing, visit IC Manufacturer.
MRF6V10010NR4 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Frequency Range | 1.8 ?C 2.0 | GHz |
| Output Power (P3dB) | 100 | W |
| Gain (Typ) | 13.5 | dB |
| Collector Supply Voltage (VC) | 28 | V |
| Collector Current (IC) | 5.6 | A |
| Input Return Loss | 12 | dB (Typ) |
| Output Return Loss | 12 | dB (Typ) |
| Package Type | Flange Mount | N/A |
| Thermal Resistance (Junction to Case) | 0.3 | ??C/W |
MRF6V10010NR4 Key Features
- High Output Power Capability: Supports up to 100 W at 1.8?C2.0 GHz, enabling strong signal transmission for RF power amplification applications.
- Wide Bandwidth Operation: Covers a broad 200 MHz frequency range, offering flexibility in various wireless communication systems.
- Robust Thermal Management: Low thermal resistance ensures effective heat dissipation, improving reliability under continuous wave and pulsed operation.
- Excellent Gain and Linearity: Delivers typical gain of 13.5 dB, supporting linear amplification necessary for advanced modulation schemes.
- Flange Mount Package: Mechanical design facilitates easy integration into RF modules and thermal management solutions.
MRF6V10010NR4 Advantages vs Typical Alternatives
This transistor excels in delivering high power output with efficient thermal handling compared to typical RF transistors. Its wide frequency range and linear gain make it ideal for applications requiring precise signal amplification. The flange mount package enhances integration and thermal performance, contributing to greater reliability and longevity in industrial environments. Overall, it offers a balanced combination of performance and durability that outperforms many alternatives in similar power and frequency classes.
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Typical Applications
- Wireless Infrastructure Amplifiers: Ideal for cellular base stations and repeaters, providing consistent high-power gain over the 1.8?C2.0 GHz bands common in mobile communications.
- Radar Systems: Suitable for radar transmitters requiring robust pulsed operation and high linearity in the specified frequency range.
- Industrial RF Heating: Supports applications requiring efficient, high-power RF signal amplification for material processing and heating.
- Test and Measurement Equipment: Enables accurate signal generation in test benches and RF instrumentation with stable output power and gain.
MRF6V10010NR4 Brand Info
This product is a high-performance RF transistor from a leading semiconductor manufacturer renowned for delivering reliable and durable components for RF power applications. Designed with advanced GaN technology, it ensures superior efficiency and ruggedness ideal for demanding industrial, communication, and defense markets. The product??s engineering emphasizes thermal management and linearity, making it a preferred choice for engineers seeking robust amplification solutions in the 1.8 to 2.0 GHz frequency spectrum.
FAQ
What frequency range does this RF transistor cover?
This device operates effectively within the 1.8 to 2.0 GHz frequency range, making it suitable for many wireless communication and radar applications requiring broadband RF amplification.
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What is the typical output power capability of this transistor?
The transistor delivers a typical output power of 100 W at the 3 dB compression point, providing strong and reliable RF signal amplification for industrial and commercial uses.
How does the transistor handle thermal dissipation?
Featuring a low junction-to-case thermal resistance of 0.3 ??C/W and a flange mount package, it allows efficient heat removal, which is crucial for maintaining performance and reliability during continuous or pulsed operation.
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Is this transistor suitable for pulsed operation?
Yes, it is designed to support both continuous wave and pulsed operation, enabling its use in radar and other applications that require high peak power with stable performance.
What package type does this transistor use, and why is it important?
The flange mount package provides mechanical stability and excellent thermal conductivity, simplifying integration into RF power amplifiers and ensuring efficient heat dissipation in high-power applications.
