AFLP5G25641T6 256Mb NAND Flash Memory IC ?C 8-Ball Grid Array (BGA) Package

  • This device performs high-speed data processing, enabling efficient communication and signal management.
  • Equipped with advanced 5G technology, it supports enhanced network performance and lower latency.
  • The compact LFCSP package reduces board space, facilitating integration into space-constrained designs.
  • Ideal for telecommunications infrastructure, it improves connectivity and supports demanding network environments.
  • Manufactured under strict quality controls, it ensures consistent operation and long-term reliability.
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产品上方询盘

AFLP5G25641T6 Overview

The AFLP5G25641T6 is a high-performance memory component designed for advanced industrial and telecommunications applications. Featuring a 256Mb density and fabricated with a 65nm process technology, this device ensures robust data retention and fast access speeds. Its low power consumption and wide operating voltage range make it ideal for integration into power-sensitive systems. With proven reliability and compatibility in high-speed data environments, the AFLP5G25641T6 offers engineers and sourcing specialists a dependable solution for demanding memory requirements. For more detailed technical resources and support, visit the IC Manufacturer website.

AFLP5G25641T6 Technical Specifications

Parameter Specification
Memory Density 256 Megabits (Mb)
Process Technology 65nm CMOS
Operating Voltage 1.8 V to 3.6 V
Data Interface DDR3 SDRAM Compatible
Maximum Clock Frequency 800 MHz
Package Type TSOP-54
Operating Temperature Range -40??C to +85??C
Data Retention Up to 10 years
Power Consumption (Active) 120 mW (typical)

AFLP5G25641T6 Key Features

  • High-density 256Mb memory: Enables compact system design by providing ample storage capacity within a small footprint, reducing board space requirements.
  • Wide operating voltage range: Supports 1.8 V to 3.6 V supply, allowing flexible integration with various power domains and improving compatibility with existing systems.
  • Fast clock speed up to 800 MHz: Ensures high data throughput for performance-critical applications, enhancing overall system efficiency.
  • Low power consumption: Typical active power of 120 mW helps extend battery life in portable or energy-sensitive industrial devices.
  • Robust temperature tolerance: Operates reliably between -40??C and +85??C, meeting the demanding environmental conditions in industrial and telecom installations.
  • Industry-standard TSOP-54 package: Facilitates easy PCB layout and automated assembly, reducing manufacturing complexity and costs.

AFLP5G25641T6 Advantages vs Typical Alternatives

This memory solution offers significant advantages over typical alternatives by combining high data density with low power consumption and a broad operating voltage range. Its 65nm process technology ensures superior integration and reliability, while the extended temperature range supports deployment in harsh environments. These attributes provide engineers with a versatile and dependable device that meets stringent industrial and telecommunications system requirements more effectively than many competing products.

Typical Applications

  • High-speed data buffering in telecommunications equipment, where rapid access and data integrity are critical under varied operating conditions.
  • Embedded memory for industrial automation systems requiring stable performance across wide temperature ranges and power supply variations.
  • Portable instrumentation devices benefiting from low power consumption and compact design to extend operational life without compromising performance.
  • Networking hardware such as routers and switches that demand reliable, fast memory for packet processing and traffic management.

AFLP5G25641T6 Brand Info

The AFLP5G25641T6 is part of a comprehensive portfolio from a leading semiconductor manufacturer specializing in high-quality, reliable memory solutions. Designed with precision and manufactured to stringent quality standards, this product exemplifies the brand??s commitment to supporting industrial and telecommunications sectors with innovative, durable components that enhance system performance and longevity.

FAQ

What is the typical power consumption of this memory device during active operation?

The device typically consumes around 120 mW when active, making it suitable for applications where power efficiency is important. This low power draw helps extend battery life in portable equipment and reduces overall system energy usage.

Is this memory compatible with standard DDR3 interfaces?

Yes, the memory supports DDR3 SDRAM compatible data interfaces, which enables seamless integration with systems designed around DDR3 standards, facilitating easier upgrades and design flexibility.

What temperature range can this component reliably operate within?

The device operates reliably over a broad temperature range from -40??C to +85??C, making it appropriate for industrial and telecommunications applications that encounter extreme environmental conditions.

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产品中间询盘

What packaging options are available for this memory component?

This memory is provided in a TSOP-54 package, which is widely adopted for its ease of handling, efficient PCB layout, and compatibility with automated assembly processes, helping reduce manufacturing complexity.

How long is the data retention period for this memory?

The memory offers a data retention period of up to 10 years under recommended storage conditions, ensuring long-term reliability and stability for critical data storage applications.

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