MF1PH4201DUD/00Z Overview
The MF1PH4201DUD/00Z is a high-performance power MOSFET designed for efficient switching and power management in industrial electronics. Featuring low on-resistance and fast switching capabilities, it delivers enhanced energy efficiency and thermal performance critical for modern power applications. This device supports robust operation under demanding electrical conditions, making it suitable for a wide range of power conversion and motor control uses. Available through IC Manufacturer, it offers engineers a reliable solution optimized for integration in compact and high-efficiency systems.
MF1PH4201DUD/00Z Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 70 A |
| On-Resistance (RDS(on)) | 1.8 m?? @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | 1.2 V (typical) |
| Total Gate Charge (Qg) | 42 nC |
| Power Dissipation (PD) | 150 W |
| Operating Junction Temperature (Tj) | -55??C to +175??C |
| Package Type | Dual N-Channel Power Package (Multi-chip) |
MF1PH4201DUD/00Z Key Features
- Low On-Resistance: Ensures minimal conduction losses, improving overall system efficiency and reducing heat generation during high current operation.
- High Continuous Drain Current: Capable of handling up to 70 A, supporting demanding power applications with significant current requirements.
- Fast Switching Performance: Enables efficient operation in high-frequency power conversion circuits, reducing switching losses and improving response times.
- Wide Operating Temperature Range: Allows reliable use in harsh industrial environments, maintaining performance from -55??C to +175??C.
- Integrated Dual N-Channel Configuration: Supports compact design and reduces PCB footprint while enabling versatile circuit topologies.
MF1PH4201DUD/00Z Advantages vs Typical Alternatives
This device offers superior switching efficiency and lower conduction losses compared to typical MOSFETs in the same voltage class. Its optimized on-resistance and gate charge parameters contribute to enhanced power conversion efficiency and thermal management. The integration of dual N-channel MOSFETs simplifies design complexity, reducing component count and improving reliability. These factors make it a preferred choice for engineers seeking high-performance, low-loss devices tailored for industrial power electronics.
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Typical Applications
- High-efficiency synchronous rectification in DC-DC converters, improving power conversion efficiency and reducing thermal stress in power supply units.
- Motor control drivers requiring robust current handling and fast switching for precision speed and torque control.
- Power management modules in industrial automation equipment, offering reliable operation under variable load conditions.
- Battery protection and charging circuits where low on-resistance and thermal stability are critical for extended battery life and safety.
MF1PH4201DUD/00Z Brand Info
The MF1PH4201DUD/00Z is a product from a leading semiconductor manufacturer known for delivering advanced power management components. This device exemplifies the brand??s commitment to high quality and innovation in power MOSFET technology. Designed for industrial and automotive-grade applications, it combines state-of-the-art fabrication processes with rigorous testing standards to ensure long-term reliability and performance. The brand??s extensive support network and comprehensive datasheets facilitate seamless integration and design optimization for engineers worldwide.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The maximum drain-source voltage for this device is 40 volts, which defines the highest voltage the MOSFET can block when it is in the off state without breakdown. This rating is suitable for medium-voltage power applications requiring reliable switching performance.
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How does the low on-resistance benefit system efficiency?
Low on-resistance reduces the power lost as heat when current flows through the MOSFET in the on state. This results in higher efficiency, lower thermal dissipation, and potentially smaller heat sinks, which benefits system design by improving reliability and reducing overall size and cost.
Can this device operate at high temperatures typical of industrial environments?
Yes, it supports an operating junction temperature range from -55??C to +175??C, making it suitable for harsh industrial and automotive environments where temperature variations are significant. This ensures stable performance and longevity under demanding conditions.
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What are the advantages of the dual N-channel MOSFET configuration?
The dual N-channel configuration allows two MOSFETs to be integrated into a single package, reducing PCB space and simplifying circuit design. It also enhances switching performance and thermal management by enabling complementary or synchronous switching topologies commonly used in power converters.
Is the gate charge specification important for switching speed?
Yes, the total gate charge affects how quickly the MOSFET can switch on and off. A lower gate charge means faster switching speeds and reduced switching losses, which is critical in high-frequency power applications to maintain efficiency and reduce electromagnetic interference.
