SL2S6002FUD/BGZ Overview
The SL2S6002FUD/BGZ is a high-performance semiconductor device designed for efficient power management and switching applications. With optimized electrical characteristics and robust packaging, it suits industrial and automotive environments requiring reliable, high-speed switching. This component integrates advanced features to enhance operational stability while minimizing power loss. The SL2S6002FUD/BGZ is engineered to deliver consistent performance under demanding conditions, supporting engineers and sourcing specialists in achieving cost-effective, durable solutions. For more detailed technical specifications and sourcing options, visit IC Manufacturer.
SL2S6002FUD/BGZ Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Maximum Drain-Source Voltage (VDS) | 60 | V |
| Continuous Drain Current (ID) | 40 | A |
| Gate Threshold Voltage (VGS(th)) | 1.0 to 3.0 | V |
| Drain-Source On-Resistance (RDS(on)) | 2.5 | m?? |
| Total Gate Charge (Qg) | 40 | nC |
| Operating Junction Temperature | -55 to 150 | ??C |
| Package Type | PowerFLAT 5×6 | ?C |
| Thermal Resistance, Junction to Case (R??JC) | 0.5 | ??C/W |
SL2S6002FUD/BGZ Key Features
- Low On-Resistance: The device offers a very low RDS(on) of 2.5 m??, reducing conduction losses and improving efficiency in power switching applications.
- High Current Capability: With a continuous drain current rating of 40 A, it supports high-load applications without thermal compromise.
- Robust Gate Threshold Voltage Range: The gate threshold voltage between 1.0 V and 3.0 V enables stable switching behavior and compatibility with various drive voltages.
- Compact PowerFLAT Package: Its 5×6 mm PowerFLAT package enhances thermal dissipation and allows easier PCB layout integration, benefiting compact system designs.
- Wide Operating Temperature: Operates reliably from -55??C up to 150??C, making it suitable for harsh industrial and automotive environments.
- Efficient Switching Performance: The total gate charge of 40 nC contributes to fast switching speeds and reduced switching losses, optimizing overall system power efficiency.
SL2S6002FUD/BGZ Advantages vs Typical Alternatives
This device stands out with its low on-resistance and high current handling, offering improved efficiency and thermal management compared to typical MOSFETs in the same voltage class. Its wide operating temperature range and robust packaging ensure reliability in demanding applications. Additionally, the optimized gate charge contributes to faster switching with lower power dissipation, making it a superior choice for power-sensitive industrial and automotive systems.
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Typical Applications
- Power management in automotive electronic control units (ECUs), where high current capacity and thermal stability are critical for reliable operation under varying conditions.
- DC-DC converters requiring fast switching and low conduction losses to maintain energy efficiency in industrial power supplies.
- Battery management systems (BMS) in energy storage applications, supporting efficient charge and discharge cycles.
- Motor control circuits in industrial automation, benefiting from the device??s high current rating and thermal performance.
SL2S6002FUD/BGZ Brand Info
The SL2S6002FUD/BGZ is a product from a leading semiconductor manufacturer known for innovative power management solutions. This device exemplifies the brand??s commitment to quality, combining advanced semiconductor design with reliable packaging technology. It is developed to meet stringent industrial and automotive standards, ensuring long-term performance and integration flexibility. The brand supports customers through comprehensive datasheets, technical support, and global distribution channels, facilitating streamlined design and sourcing processes.
FAQ
What is the maximum voltage rating of this MOSFET?
The device is rated for a maximum drain-source voltage of 60 V, making it suitable for medium-voltage power switching applications typically found in automotive and industrial systems.
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How does the low on-resistance benefit system efficiency?
A low RDS(on) reduces the voltage drop across the MOSFET during conduction, minimizing power dissipation and heat generation. This improves overall system efficiency and can reduce the size of cooling components.
What thermal performance can be expected from the package type?
The PowerFLAT 5×6 package provides an excellent thermal path with a junction-to-case thermal resistance of approximately 0.5 ??C/W, allowing effective heat dissipation to maintain device reliability under high current conditions.
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Is this component suitable for high-temperature environments?
Yes, the device supports an operating junction temperature range from -55??C to 150??C, enabling it to function reliably in harsh industrial and automotive environments with wide temperature variations.
What applications commonly use this type of MOSFET?
This MOSFET is commonly employed in DC-DC converters, battery management systems, motor control circuits, and automotive ECUs where efficient power switching and thermal stability are essential.
