NTP52101G0JHKZ Overview
The NTP52101G0JHKZ is a high-performance semiconductor component designed for efficient power management in industrial and consumer electronics. Engineered to deliver reliable operation with optimized switching characteristics, it supports applications requiring precise control and energy efficiency. This device integrates advanced features that enhance thermal stability and reduce conduction losses, making it ideal for compact, high-density circuit designs. Its robust electrical parameters ensure dependable performance under varying operational conditions. For detailed product sourcing and technical support, visit IC Manufacturer.
NTP52101G0JHKZ Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 50 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| RDS(on) (Max) at VGS=4.5 V | 1.6 m?? |
| RDS(on) (Max) at VGS=10 V | 1.3 m?? |
| Total Gate Charge (Qg) | 14 nC |
| Operating Junction Temperature (TJ) | -55??C to 150??C |
| Package Type | PowerPAK? SO-8 |
NTP52101G0JHKZ Key Features
- Low On-Resistance: Provides minimal conduction losses, improving efficiency and reducing heat generation in power circuits.
- High Current Handling: Supports continuous drain currents up to 50 A, enabling operation in demanding power applications without performance degradation.
- Fast Switching Speed: Low gate charge facilitates rapid switching, enhancing overall system responsiveness and reducing switching losses.
- Wide Operating Temperature Range: Ensures consistent performance in harsh environments, supporting both industrial and automotive use cases.
- Compact PowerPAK? SO-8 Package: Allows for high density PCB layouts while maintaining excellent thermal performance and ease of assembly.
NTP52101G0JHKZ Advantages vs Typical Alternatives
This device offers superior conduction efficiency through its ultra-low RDS(on) values, significantly reducing power dissipation compared to typical MOSFETs. Its high current capacity and robust thermal tolerance provide reliable operation in high-demand circuits. The efficient gate charge characteristics enable faster switching, enhancing overall system efficiency and reducing electromagnetic interference risks. These advantages make it a compelling choice over conventional alternatives in power management applications.
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Typical Applications
- Power supply circuits requiring efficient switching devices to minimize losses and improve thermal management in compact designs.
- Motor control systems where high current capability and fast switching enhance performance and energy efficiency.
- Battery-powered devices demanding low voltage threshold and minimal conduction resistance for extended battery life.
- DC-DC converters and voltage regulators that benefit from low gate charge and robust thermal handling characteristics.
NTP52101G0JHKZ Brand Info
This product is part of a line of advanced power MOSFETs engineered to meet the stringent requirements of modern electronic designs. It is manufactured with precision using state-of-the-art semiconductor fabrication processes to ensure consistent quality and performance. The integration of low resistance, high current capacity, and compact packaging reflects the brand??s commitment to delivering innovative power solutions tailored for industrial, automotive, and consumer electronics markets.
FAQ
What is the maximum drain-source voltage rating of this device?
The maximum drain-source voltage is rated at 30 volts, making the device suitable for a variety of low to medium voltage power applications while ensuring reliable operation under expected voltage stress conditions.
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How does the low on-resistance benefit circuit performance?
A low on-resistance minimizes conduction losses when the device is in the ‘on’ state, which reduces heat generation and improves overall energy efficiency. This translates to enhanced reliability and potentially smaller thermal management solutions in the final design.
Can this MOSFET operate in high-temperature environments?
Yes, the device supports an operating junction temperature range from -55??C up to 150??C, allowing it to function effectively in harsh industrial or automotive environments where temperature extremes are common.
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What package type does the device use and what are its benefits?
The component is housed in a PowerPAK? SO-8 package, which offers a compact footprint for high-density PCB layouts and excellent thermal dissipation capabilities, facilitating efficient heat removal in power applications.
Is the device suitable for fast switching applications?
Absolutely. The MOSFET features a low total gate charge of 14 nC, which enables fast switching speeds and reduces switching losses, making it ideal for applications such as DC-DC converters and motor drives requiring rapid transitions.
