NCK2982AHN/T0B/UY Overview
The NCK2982AHN/T0B/UY is a high-performance semiconductor device designed for advanced industrial applications requiring precise control and efficient power management. Engineered to deliver reliable operation under demanding conditions, it integrates robust electrical characteristics with a compact form factor. This product is optimized for enhanced switching performance and thermal stability, making it suitable for power conversion, motor control, and other power electronics systems. With its proven reliability and consistent specifications, it supports engineers and sourcing specialists seeking dependable components from a trusted provider. More details can be found at the IC Manufacturer.
NCK2982AHN/T0B/UY Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V |
| Continuous Drain Current (ID) at 25??C | 8.8 | A |
| Gate Threshold Voltage (VGS(th)) | 1.0 to 2.5 | V |
| RDS(on) (Drain-Source On-Resistance) | 7.3 m?? (max) at VGS = 4.5 V | m?? |
| Total Gate Charge (Qg) | 12 | nC |
| Input Capacitance (Ciss) | 600 | pF |
| Operating Junction Temperature (Tj) | -55 to +150 | ??C |
| Package Type | Power SO-8 | ?C |
NCK2982AHN/T0B/UY Key Features
- Low On-Resistance: The device exhibits a maximum RDS(on) of 7.3 m?? at 4.5 V gate drive, reducing conduction losses and improving overall system efficiency.
- High Current Capability: Supports continuous drain current up to 8.8 A at 25??C, enabling it to handle demanding load conditions with stability and reliability.
- Fast Switching Performance: With a total gate charge of 12 nC, it facilitates rapid switching speeds, minimizing switching losses and enhancing power conversion efficiency.
- Wide Operating Temperature Range: The device operates reliably from -55??C to +150??C junction temperatures, suitable for harsh industrial environments and ensuring durability.
NCK2982AHN/T0B/UY Advantages vs Typical Alternatives
This product offers a compelling combination of low on-resistance and high current capacity that outperforms many standard MOSFETs in similar voltage classes. Its optimized gate charge and input capacitance enable faster switching and lower power dissipation, which translates to higher efficiency and reduced thermal stress. The extended operating temperature range ensures reliable function in challenging industrial settings, making it a superior choice compared to typical alternatives lacking such robust electrical and thermal characteristics.
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Typical Applications
- Power conversion systems: Ideal for DC-DC converters and power management circuits requiring efficient switching and low conduction losses in industrial power supplies.
- Motor control: Suitable for driving motors in automation and robotics due to its high current capability and fast switching characteristics.
- Battery management: Can be used in battery protection and charging circuits for industrial battery packs and energy storage systems.
- General purpose switching: Applicable in various power switching circuits where low power loss and thermal stability are essential.
NCK2982AHN/T0B/UY Brand Info
Manufactured by a reputable semiconductor company, this component is part of a product line renowned for quality and reliability in power MOSFET technology. The device is produced using advanced fabrication processes to guarantee stringent performance standards and consistent electrical parameters. It is widely recognized in the industrial electronics market for its robust design and suitability for demanding applications, making it a trusted choice for engineers and procurement professionals seeking dependable power semiconductor solutions.
FAQ
What is the maximum drain-source voltage rating for this device?
The device supports a maximum drain-source voltage (VDS) of 30 V, making it suitable for low-voltage power applications where efficient switching and low conduction loss are required.
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How does the on-resistance affect system efficiency?
Lower on-resistance reduces conduction losses during operation, which directly improves system efficiency by minimizing power dissipation as heat. This allows for cooler operation and potentially smaller heat sinks.
What package type does this component use?
The device is housed in a Power SO-8 package, which provides a compact footprint and good thermal performance, facilitating integration into space-constrained industrial circuit designs.
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Can this device operate in high-temperature environments?
Yes, it is rated for junction temperatures ranging from -55??C up to +150??C, allowing reliable operation in harsh industrial environments with wide temperature fluctuations.
What are the key benefits of the gate charge specification?
A total gate charge of 12 nC enables fast switching speeds, which reduce switching losses and improve overall power conversion efficiency, especially important in applications requiring rapid switching cycles.
