MPF5300AVNA0EP Overview
The MPF5300AVNA0EP is a high-performance power MOSFET designed to meet demanding industrial and automotive applications. This device offers low on-resistance and fast switching capabilities, enabling efficient power management and reduced energy losses. Its rugged construction ensures reliable operation in harsh environments, while the compact package supports high-density system designs. Engineered for optimized thermal performance and enhanced robustness, the MPF5300AVNA0EP stands out as an ideal choice for engineers seeking a balance between power efficiency and durability. Detailed product information is available at IC Manufacturer.
MPF5300AVNA0EP Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 78 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 3.0 V |
| On-Resistance (RDS(on)) | 3.0 m?? @ VGS=4.5 V |
| Total Gate Charge (Qg) | 33 nC |
| Power Dissipation (PD) | 150 W |
| Operating Junction Temperature (TJ) | -55??C to +150??C |
| Package | TO-220 |
MPF5300AVNA0EP Key Features
- Low On-Resistance: With an RDS(on) as low as 3.0 m?? at 4.5 V gate drive, this MOSFET reduces conduction losses, improving overall system efficiency and thermal management.
- High Current Capacity: Supports continuous drain currents up to 78 A, making it suitable for high-power switching and load driving applications.
- Fast Switching Performance: Low total gate charge of 33 nC enables rapid switching, enhancing performance in DC-DC converters and motor control circuits.
- Wide Operating Temperature Range: Rated for junction temperatures from -55??C to +150??C, ensuring reliable operation in extreme industrial and automotive environments.
- Robust Package Design: The TO-220 package provides excellent thermal dissipation and mechanical durability for demanding application conditions.
- Gate Threshold Stability: A consistent gate threshold voltage range maintains predictable switching behavior for precise control.
MPF5300AVNA0EP Advantages vs Typical Alternatives
The MPF5300AVNA0EP offers a combination of low on-resistance and high current handling that typically surpasses standard MOSFET alternatives. Its optimized gate charge ensures faster switching with reduced power loss, improving efficiency in power conversion systems. The device??s robust thermal and mechanical characteristics enhance reliability in challenging environments. Together, these factors provide engineers with a reliable, energy-efficient solution that integrates seamlessly into high-performance industrial and automotive designs.
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Typical Applications
- Power management in automotive systems, such as electronic control units (ECUs) and battery management, where efficient switching and high current handling are critical for system reliability.
- DC-DC converters requiring fast switching speeds and low conduction losses to optimize power efficiency and thermal performance.
- Industrial motor drives that demand robust devices capable of withstanding high currents and temperature variations during operation.
- General purpose switching applications including power supplies and load switching in harsh environments, benefiting from the device??s rugged package and wide temperature range.
MPF5300AVNA0EP Brand Info
This MOSFET is produced by a leading semiconductor manufacturer known for reliability and innovation in power devices. The MPF5300AVNA0EP represents the brand??s commitment to delivering components that combine high efficiency, durability, and ease of integration. Designed to meet rigorous industrial and automotive standards, it exemplifies the brand??s expertise in optimizing semiconductor technologies for demanding applications. Its availability ensures consistent supply and technical support, reinforcing confidence in long-term project deployment.
FAQ
What is the maximum voltage rating of the MPF5300AVNA0EP?
The maximum drain-source voltage rating is 30 volts. This ensures the device can safely operate in circuits where voltages do not exceed this threshold, preventing breakdown and ensuring reliable switching.
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How does the on-resistance affect system efficiency?
Lower on-resistance reduces power losses during conduction, which enhances overall efficiency and reduces heat generation. The 3.0 m?? RDS(on) value significantly improves energy savings in power management applications.
Is this device suitable for high-temperature environments?
Yes, it supports operation from -55??C up to +150??C junction temperature, making it suitable for automotive under-hood and industrial settings where temperature extremes are common.
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What package does this MOSFET use and why is it important?
The TO-220 package provides excellent thermal dissipation and mechanical robustness, which is important for maintaining device performance under high power and harsh environmental conditions.
Can this MOSFET be used in fast-switching power converters?
Absolutely. The low total gate charge of 33 nC allows for quick switching transitions, minimizing switching losses and enabling efficient operation in DC-DC converters and motor drive circuits.





