JN16FG06SS2 Overview
The JN16FG06SS2 is a high-performance semiconductor device designed for industrial and automotive applications requiring robust electrical characteristics and compact packaging. This component delivers reliable switching capabilities with low on-resistance, enabling efficient power management in demanding environments. Its optimized design ensures low power loss and enhanced thermal performance, making it suitable for power conversion, motor control, and load switching applications. Engineers and sourcing specialists will appreciate the device??s balance of performance and durability, supported by a qualified package and comprehensive technical specifications provided by IC Manufacturer.
JN16FG06SS2 Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 16 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Maximum Power Dissipation (PD) | 50 W |
| On-Resistance (RDS(on)) | 6 m?? @ VGS=10 V |
| Gate Charge (Qg) | 30 nC |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | Surface-Mount SSO-8 |
JN16FG06SS2 Key Features
- Low On-Resistance: Minimizes conduction losses, improving energy efficiency in power switching applications.
- High Continuous Drain Current: Supports loads up to 16 A, enabling robust handling of demanding currents in motor and power control circuits.
- Fast Switching Capability: Reduces switching losses and improves overall system response time, crucial for high-frequency operation.
- Wide Operating Temperature Range: Ensures reliable performance from -55??C to +150??C, suitable for harsh industrial environments.
- Compact SSO-8 Package: Supports high-density PCB layouts and efficient thermal dissipation.
JN16FG06SS2 Advantages vs Typical Alternatives
Compared to typical MOSFETs in the same voltage and current class, this device offers lower RDS(on) and better thermal handling, which translates into higher efficiency and reliability. Its fast switching and compact packaging provide advantages in power-sensitive and space-constrained applications, making it a preferred choice for industrial power management and automotive electronics.
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Typical Applications
- Power conversion modules, including DC-DC converters and battery management systems, where efficient switching and low losses are critical.
- Motor control circuits that require high current handling and fast switching for smooth operation.
- Load switch applications in automotive and industrial systems demanding robust performance under temperature extremes.
- General-purpose switching in power management for industrial automation and consumer electronics.
JN16FG06SS2 Brand Info
This device is produced under the IC Manufacturer brand, known for delivering reliable and high-quality semiconductor components for industrial and automotive markets. The JN16FG06SS2 embodies the company??s commitment to innovation and performance, offering engineers a trusted solution optimized for efficiency and durability in power switching applications.
FAQ
What is the maximum voltage rating of the JN16FG06SS2?
The device is rated for a maximum drain-source voltage of 60 volts, making it suitable for medium-voltage applications such as automotive and industrial power control circuits.
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How does the low on-resistance benefit circuit performance?
Low on-resistance reduces the conduction losses during operation, which decreases heat generation and improves overall energy efficiency. This feature also enables smaller heat sinks and more compact system designs.
Can this MOSFET operate reliably in harsh temperature conditions?
Yes, it supports an operating temperature range from -55??C to +150??C, making it suitable for harsh environments including automotive under-hood and industrial outdoor applications.
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What package type is used for this device, and why is it important?
| Application | Automotive Electronics, Energy and Power, Industrial Automation |
|---|




