DW05S01CZZ1 Voltage Regulator IC – SOT-23 Package – Power Management Module

DW05S01CZZ1 Voltage Regulator IC - SOT-23 Package - Power Management Module
Application
Consumer Electronics, Internet of Things (IoT), Telecommunications and Networking
  • DW05S01CZZ1 provides efficient power management, ensuring stable voltage supply for electronic devices.
  • Features a precise voltage regulation capability, critical for maintaining device performance under varying loads.
  • The compact CBZ package minimizes board space, facilitating integration into small form-factor designs.
  • Ideal for portable electronics, supporting consistent operation and extending device runtime in real-world use.
  • Manufactured with strict quality controls to enhance durability and maintain long-term operational reliability.
SKU: DW05S01CZZ1 Category: Brand:
JAE Electronics
产品上方询盘

DW05S01CZZ1 Overview

The DW05S01CZZ1 is a highly reliable power MOSFET designed for efficient switching applications in industrial and consumer electronics. With optimized low on-resistance and fast switching capabilities, it delivers improved energy efficiency and thermal performance. Its compact package supports high-density board designs while ensuring robust electrical and thermal characteristics. This device is ideal for power management in DC-DC converters, motor drives, and power supplies, offering engineers a dependable solution for enhancing system performance. For detailed technical support and product sourcing, visit IC Manufacturer.

DW05S01CZZ1 Technical Specifications

Parameter Specification
Type N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 5.0 A
Gate Threshold Voltage (VGS(th)) 1.0 ?C 2.5 V
On-Resistance (RDS(on)) 8 m?? @ VGS = 4.5 V
Total Gate Charge (Qg) 7.5 nC
Maximum Power Dissipation (PD) 1.2 W
Operating Junction Temperature (Tj) -55 ??C to +150 ??C
Package Type SOT-23

DW05S01CZZ1 Key Features

  • Low On-Resistance: The device??s RDS(on) of 8 m?? reduces conduction losses, enhancing overall system efficiency and minimizing heat generation.
  • Fast Switching Speed: Optimized gate charge characteristics enable rapid switching, supporting high-frequency operation in power conversion circuits.
  • Compact SOT-23 Package: Allows for high-density PCB layouts, critical for space-constrained applications without compromising thermal performance.
  • Wide Operating Temperature Range: Ensures reliable operation in demanding environments from -55 ??C up to +150 ??C, suitable for industrial-grade applications.

DW05S01CZZ1 Advantages vs Typical Alternatives

This power MOSFET excels by combining low on-resistance with a compact footprint, offering superior efficiency and thermal handling compared to typical discrete transistors. Its fast switching and low gate charge minimize switching losses, making it preferable for high-frequency power management. The wide temperature range and robust packaging further enhance reliability, positioning it as a strong choice for engineers prioritizing performance and durability.

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Typical Applications

  • DC-DC Converters: Optimized for synchronous rectification and load switching to increase power efficiency in voltage regulation modules (VRMs).
  • Battery Management Systems: Suitable for controlling current flow and protecting battery packs in portable and industrial energy storage solutions.
  • Motor Control Circuits: Supports efficient drive of small motors in consumer and industrial devices with precise switching performance.
  • Power Supply Circuits: Ideal for switching regulators and load switches in compact power supply designs requiring low losses and reliable operation.

DW05S01CZZ1 Brand Info

This MOSFET is produced under stringent quality standards by a reputable semiconductor manufacturer recognized for delivering advanced power management components. Engineered to meet the needs of modern electronics, this product line emphasizes efficiency, reliability, and integration ease. The DW05S01CZZ1 benefits from the brand??s extensive expertise in MOSFET technology, ensuring consistent performance in demanding industrial and consumer environments.

FAQ

What is the maximum drain-source voltage rating of this MOSFET?

The maximum drain-source voltage rating is 30 V, making it suitable for low-voltage power applications where efficient switching and protection are required.

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How does the low on-resistance benefit system design?

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