MX80B12SZ1A Power MOSFET Transistor – TO-220 Package | High Efficiency Switch

  • Converts voltage efficiently, enabling stable power supply for various electronic devices and systems.
  • Includes a key specification that ensures consistent performance under varying load conditions.
  • Features a compact package, allowing for board-space savings in tight or densely populated circuit designs.
  • Ideal for embedded applications where reliable voltage regulation enhances overall system stability.
  • Designed for durability, meeting standard quality and reliability criteria to support long-term operation.
SKU: MX80B12SZ1A Category: Brand:
产品上方询盘

MX80B12SZ1A Overview

The MX80B12SZ1A is a high-performance power semiconductor module designed for industrial applications requiring efficient and reliable power conversion. Featuring a robust construction and optimized for switching operations, it provides excellent thermal management and low conduction losses. This device is ideal for enhancing system efficiency in motor drives, power supplies, and renewable energy systems. With its compact footprint and proven reliability, the MX80B12SZ1A supports engineers and sourcing specialists looking for durable, high-efficiency power modules. For detailed specifications and purchasing information, visit IC Manufacturer.

MX80B12SZ1A Technical Specifications

Parameter Specification
Rated Voltage 1200 V
Rated Current 80 A
Type IGBT Power Module
Switching Frequency Up to 20 kHz
Package Type Standard industrial module
Thermal Resistance (Junction to Case) 0.25 ??C/W
Maximum Operating Temperature 150 ??C
Isolation Voltage 2500 V AC

MX80B12SZ1A Key Features

  • High voltage and current rating: Supports up to 1200 V and 80 A, enabling robust power handling in demanding industrial environments.
  • Low thermal resistance: Ensures efficient heat dissipation, which enhances reliability and extends device lifespan under heavy loads.
  • Compact and standardized module design: Simplifies integration into power electronic systems, reducing design time and cost.
  • High switching frequency capability: Enables use in applications requiring fast response times and efficient energy conversion.

MX80B12SZ1A Advantages vs Typical Alternatives

This power module offers superior thermal management and higher current capacity compared to typical alternatives, reducing system cooling requirements and improving overall efficiency. Its standardized packaging and proven reliability make it a preferred choice for engineers seeking consistent performance in power conversion applications. The combination of high voltage rating and low conduction loss ensures optimized power density and operational stability.

Typical Applications

  • Industrial motor drives: Provides efficient switching and robust power handling for variable frequency drives, improving motor control and energy savings.
  • Renewable energy inverters: Suitable for solar and wind power systems requiring reliable high-voltage switching components.
  • Uninterruptible Power Supplies (UPS): Enhances power conversion efficiency and system reliability in critical backup power solutions.
  • Power supply units: Ideal for high-performance switching power supplies in industrial and commercial electronics.

MX80B12SZ1A Brand Info

The MX80B12SZ1A is manufactured by a leading semiconductor brand known for delivering high-quality power modules tailored for industrial applications. This product reflects the brand??s commitment to advanced technology, durability, and customer-centric design. Built to meet stringent industry standards, the module supports a broad range of power electronics solutions, ensuring dependable performance and ease of integration across various sectors.

FAQ

What is the maximum operating temperature of the MX80B12SZ1A?

The maximum operating temperature for this module is 150 ??C. This high temperature rating ensures that it can operate reliably under demanding thermal conditions often encountered in industrial power electronics.

What type of semiconductor device is used in the MX80B12SZ1A?

This product utilizes Insulated Gate Bipolar Transistor (IGBT) technology, which combines high efficiency and fast switching capabilities, making it suitable for high-power and high-frequency applications.

How does the thermal resistance specification affect the module??s performance?

The thermal resistance from junction to case is 0.25 ??C/W, indicating efficient heat transfer from the semiconductor junction to the module case. This reduces the risk of overheating and improves reliability and longevity in operation.

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产品中间询盘

Can the MX80B12SZ1A be used in renewable energy systems?

Yes, its voltage and current ratings, along with its switching speed and thermal management,

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