HB03P004PZ1 Overview
The HB03P004PZ1 is a high-performance semiconductor device designed for robust industrial applications requiring precise power management and signal control. Engineered for reliability and efficiency, this component offers optimized electrical characteristics including low leakage current and stable threshold voltage. Its compact package and consistent performance make it ideal for integration into advanced electronic systems. Backed by IC Manufacturer, the HB03P004PZ1 ensures enhanced operational stability and long-term durability in demanding environments.
HB03P004PZ1 Technical Specifications
Parameter | Value |
---|---|
Device Type | P-Channel MOSFET |
Drain-Source Voltage (VDS) | -30 V |
Gate-Source Voltage (VGS) | ??20 V |
Continuous Drain Current (ID) | -4 A |
Power Dissipation (PD) | 1.25 W |
Threshold Voltage (VTH) | -1.0 to -3.0 V |
On-Resistance (RDS(on)) | 0.07 ?? @ VGS = -10 V |
Operating Temperature Range | -55??C to +150??C |
Package Type | SOT-23 |
HB03P004PZ1 Key Features
- Low On-Resistance: Ensures minimal power loss and improved efficiency in switching applications, reducing heat generation.
- High Current Capability: Supports continuous drain current up to 4 A, enabling it to drive moderate loads effectively.
- Wide Operating Voltage Range: With a maximum drain-source voltage of -30 V, it suits various low-voltage power management designs.
- Compact SOT-23 Package: Facilitates easy PCB integration, saving board space in densely packed industrial electronics.
HB03P004PZ1 Advantages vs Typical Alternatives
This device offers superior power efficiency and reliable performance compared to typical P-channel MOSFETs in its class. Its low on-resistance and high current rating provide enhanced switching accuracy and reduced thermal stress, while the robust voltage ratings ensure dependable operation under varied industrial conditions. The compact SOT-23 package further improves integration flexibility over bulkier alternatives.
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Typical Applications
- Power management circuits in industrial control systems, where precise switching and low power dissipation are critical for system reliability and efficiency.
- Battery protection and load switching in portable industrial devices, maintaining system integrity and extending battery life.
- Signal switching and level shifting in sensor interface modules for accurate data acquisition.
- General purpose switching in low voltage DC-DC converters and power rail controllers.
HB03P004PZ1 Brand Info
The HB03P004PZ1 is manufactured by a leading semiconductor provider known for delivering high-quality, reliable discrete components tailored for industrial applications. The product line reflects the brand??s commitment to innovation, precision engineering, and strict quality control, ensuring consistent performance and long service life in complex electronic systems.
FAQ
What is the maximum continuous drain current supported by this MOSFET?
This MOSFET supports a continuous drain current of up to -4 A, allowing it to handle moderate loads efficiently in power switching and control applications without compromising reliability.
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What package type does the device come in, and how does it affect integration?
The device is housed in a compact SOT-23 package, which is widely used for surface-mount technology. This small footprint facilitates easy integration on printed circuit boards, especially in space-constrained industrial designs.
What is the significance of the low on-resistance characteristic?
Low on-resistance reduces the voltage drop and power dissipation during conduction, which improves overall efficiency and minimizes heat generation, critical for maintaining thermal stability in dense electronic assemblies.
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Can this MOSFET operate at high temperatures typically found in industrial environments?
Yes, the device is rated for operation across a temperature range from -55??C to +150??C