MX80A06SZ1B Overview
The MX80A06SZ1B is a high-performance semiconductor device designed for industrial and electronic applications requiring robust power management and efficient switching capabilities. It offers a compact form factor with advanced electrical characteristics suited for precision control in power electronics systems. This device is optimized for enhanced thermal performance and reliability, making it ideal for demanding environments. Engineers and sourcing specialists will appreciate its balance of efficiency, durability, and integration potential. For more detailed technical support and sourcing options, visit IC Manufacturer.
MX80A06SZ1B Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Power MOSFET |
| Drain-Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Id) | 80 A |
| Gate Threshold Voltage (Vgs(th)) | 2.0 – 4.0 V |
| Rds(on) (Max) | 6.0 m?? @ Vgs = 10 V |
| Power Dissipation (Pd) | 250 W |
| Operating Junction Temperature (Tj) | -55 to 175 ??C |
| Package Type | TO-247 |
| Gate Charge (Qg) | 65 nC |
MX80A06SZ1B Key Features
- Low on-resistance (Rds(on)): Ensures minimal conduction losses, improving overall system efficiency and thermal management.
- High voltage rating: Supports operation up to 600 V, enabling use in high-voltage power conversion and control circuits.
- Robust current handling: With an 80 A continuous drain current, it supports high-power applications without compromising reliability.
- Thermal stability: Designed for a wide operating temperature range, enhancing durability in harsh industrial environments.
MX80A06SZ1B Advantages vs Typical Alternatives
This device delivers superior performance with a low Rds(on) value that reduces power dissipation compared to typical MOSFETs in its class. Its high voltage and current ratings provide greater flexibility for demanding power electronics applications. Additionally, the robust thermal design ensures reliability and longevity, making it an excellent choice over standard components that may suffer from higher losses and thermal stress.
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Typical Applications
- Power conversion modules in industrial motor drives, where efficient switching and thermal management are critical for maintaining system performance and reliability.
- DC-DC converters requiring high current capacity and low conduction losses.
- Uninterruptible power supplies (UPS) that depend on robust semiconductor devices for reliable power delivery.
- Industrial automation equipment where high voltage switching and durability are essential for continuous operation.
MX80A06SZ1B Brand Info
The MX80A06SZ1B is a product from a leading semiconductor manufacturer, recognized for delivering reliable and high-quality power MOSFET solutions. This device is engineered to meet rigorous industrial standards, ensuring consistent performance in power electronics applications. The brand emphasizes innovation and quality control, providing components that support advanced designs and efficient power management.
FAQ
What is the maximum voltage rating of the MX80A06SZ1B?
The device supports a maximum drain-source voltage of 600 V, making it suitable for high-voltage power switching applications commonly found in industrial and power conversion systems.
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How does the low Rds(on) of this MOSFET benefit my design?
Low on-resistance reduces conduction losses and heat generation, improving overall efficiency and enabling smaller heat sinks or cooling solutions, which can reduce system size and cost.
Can this MOSFET operate at high temperatures?
Yes, it is rated for an operating junction temperature range from -55 ??C up to 175 ??C, ensuring reliable performance in harsh or high-temperature industrial environments.
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What package type does this device come in?
The MX80A06SZ1B is housed in a TO-247 package, which provides excellent thermal dissipation and is widely used for power semiconductor devices requiring easy mounting to heat sinks.