QE4301A27S-F0 Overview
The QE4301A27S-F0 is a high-performance power MOSFET designed for industrial and automotive applications requiring efficient switching and robust thermal management. This device features a low on-resistance and a compact package that supports high current loads while minimizing power loss. Optimized for switching frequencies up to several hundred kilohertz, it ensures reliable performance in demanding environments. Engineers and sourcing specialists will appreciate the device??s balance of efficiency, ruggedness, and ease of integration. For detailed specifications and purchasing options, visit the IC Manufacturer website.
QE4301A27S-F0 Technical Specifications
| Parameter | Specification |
|---|---|
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 27 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| Maximum Gate-Source Voltage (VGS) | ??20 V |
| On-Resistance (RDS(on)) | 8.5 m?? @ VGS=10 V |
| Total Gate Charge (Qg) | 25 nC |
| Power Dissipation (PD) | 45 W |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Package Type | PowerSO-8 |
QE4301A27S-F0 Key Features
- Low on-resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat generation.
- High continuous drain current capability: Supports up to 27 A, allowing operation in high-current power switching applications.
- Robust thermal performance: Wide operating temperature range ensures reliable operation in harsh environments, enhancing device longevity.
- Fast switching speeds: Low total gate charge reduces switching losses, enabling higher frequency operation and improved power density.
QE4301A27S-F0 Advantages vs Typical Alternatives
This MOSFET offers a superior combination of low on-resistance and high current rating compared to typical alternatives, resulting in improved efficiency and reduced thermal stress. Its compact PowerSO-8 package supports ease of integration in space-constrained designs. Additionally, the device??s wide operating temperature range and robust gate voltage tolerance enhance reliability and system stability in industrial and automotive applications.
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Typical Applications
- DC-DC converters in automotive and industrial systems, where efficient power switching at moderate voltages and high currents is critical for energy savings and thermal management.
- Motor control circuits requiring reliable high-current switching performance and fast response times.
- Power management modules in telecommunications infrastructure, supporting stable voltage regulation under varied load conditions.
- Load switching in battery management systems, ensuring efficient power handling and protection.
QE4301A27S-F0 Brand Info
This power MOSFET is part of the QE4301A series from a leading semiconductor manufacturer known for delivering high-reliability discrete components designed for industrial-grade applications. The QE4301A27S-F0 is engineered to meet stringent quality standards, offering consistent performance across wide temperature ranges and demanding electrical environments. Its design focuses on power efficiency, thermal resilience, and ease of implementation, making it a preferred choice among engineers requiring robust MOSFET solutions.
FAQ
What is the maximum gate voltage rating of this MOSFET?
The device supports a maximum gate-source voltage of ??20 V, providing sufficient margin for typical gate drive signals while protecting against overvoltage damage during switching events.
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Can this MOSFET handle continuous high current loads?
Yes, it is rated for continuous drain currents up to 27 A, making it suitable for applications involving sustained high current flow without compromising reliability or efficiency.
What package type does this MOSFET use, and why is it important?
The MOSFET is housed in a PowerSO-8 package, which offers a compact footprint and excellent thermal performance. This package type facilitates easy PCB




