MX84B028SF2 Overview
The MX84B028SF2 is a high-performance semiconductor memory device designed for industrial and embedded system applications requiring reliable, fast-access storage. This NAND Flash memory component offers a robust solution with precise electrical characteristics and optimized data retention, suitable for demanding environments. Engineered to meet strict quality standards, it provides engineers and sourcing specialists with a compact, efficient memory option that supports seamless integration into diverse electronics platforms. For more detailed product information and purchasing options, visit IC Manufacturer.
MX84B028SF2 Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Type | NAND Flash |
| Storage Capacity | 2 Gb (Gigabits) |
| Interface | Toggle DDR |
| Operating Voltage | 3.3 V ?? 0.3 V |
| Page Size | 2048 Bytes + 64 Bytes ECC |
| Block Size | 128 Pages per Block |
| Operating Temperature Range | -40??C to +85??C |
| Package Type | 48-pin TSOP (Type II) |
| Data Retention | 10 years (typical) |
| Endurance | 100,000 Program/Erase cycles |
MX84B028SF2 Key Features
- High-speed Toggle DDR Interface: Enables faster data transfer rates, enhancing overall system performance in embedded applications.
- Large Page and Block Size: Supports efficient data management with 2KB page size and 128-page blocks, minimizing program/erase overhead.
- Wide Operating Temperature Range: Ensures reliable operation in industrial environments from -40??C to +85??C, suitable for harsh conditions.
- Robust Endurance and Data Retention: Delivers up to 100,000 program/erase cycles and 10 years of data retention, ensuring long-term reliability.
MX84B028SF2 Advantages vs Typical Alternatives
This memory device offers superior data transfer speeds with its Toggle DDR interface compared to conventional asynchronous NAND Flash. Its extended temperature range and high endurance make it ideal for industrial-grade applications requiring durable, reliable non-volatile storage. The large page size and efficient block architecture reduce latency and power consumption, providing a clear advantage in embedded system integration over typical alternatives.
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Typical Applications
- Industrial control systems requiring stable, high-density non-volatile memory capable of operating under extreme temperature conditions.
- Embedded systems in automotive electronics that demand reliable data storage with fast access times.
- Consumer electronics requiring compact NAND Flash memory with high endurance for frequent read/write operations.
- Communication devices benefiting from the high-speed interface and robust data retention features for firmware storage.
MX84B028SF2 Brand Info
The MX84B028SF2 is part of a trusted family of NAND Flash memory products from a leading IC Manufacturer known for delivering high-quality semiconductor solutions. This device embodies the brand??s commitment to innovation, reliability, and performance in memory technology, supporting a wide range of industrial and commercial applications worldwide.
FAQ
What is the operating voltage range for the MX84B028SF2?
The device operates reliably at 3.3 V with a tolerance of ??0.3 V, ensuring stable performance within typical industrial voltage supply variations.
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How does the Toggle DDR interface benefit system design?
The Toggle DDR interface provides double data rate transfer, effectively doubling the data throughput compared to traditional asynchronous NAND Flash, which improves system speed and responsiveness.
What is the endurance rating of this NAND Flash memory?
This device supports up to 100,000 program/erase cycles, making it suitable for applications that require frequent data updates without compromising memory lifespan.
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Can the MX84B028SF2 operate in harsh environmental conditions?
Yes, it is designed to function




