MX80D04PZ1A Overview
The MX80D04PZ1A is a high-performance power MOSFET designed for industrial and automotive power management applications. Offering low on-resistance and fast switching capabilities, it optimizes efficiency in DC-DC converters, motor drives, and load switching circuits. This device supports robust thermal performance and reliable operation under demanding conditions, making it suitable for engineers and sourcing specialists seeking a balance of power density and durability. For detailed specifications and procurement, visit IC Manufacturer.
MX80D04PZ1A Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 80 A |
| Gate Threshold Voltage (VGS(th)) | 1.5?C2.5 V |
| On-Resistance (RDS(on)) | 4 m?? (typical) |
| Total Gate Charge (Qg) | 35 nC |
| Power Dissipation (PD) | 150 W |
| Operating Junction Temperature (TJ) | -55??C to +175??C |
| Package Type | Power SO-8 |
MX80D04PZ1A Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat generation.
- High Current Capability: Supports continuous drain currents up to 80 A, enabling robust power handling in demanding applications.
- Fast Switching Speed: Enables efficient operation in high-frequency power conversion circuits, reducing switching losses.
- Wide Operating Temperature Range: Ensures reliable performance in harsh industrial environments from -55??C to +175??C.
- Compact Power SO-8 Package: Facilitates thermal dissipation and simplifies PCB layout for space-constrained designs.
- Stable Gate Threshold Voltage: Provides consistent switching characteristics, enhancing design predictability.
MX80D04PZ1A Advantages vs Typical Alternatives
This MOSFET offers superior conduction efficiency through its low on-resistance and higher current capacity compared to typical devices in the same voltage class. Its fast switching reduces power losses, improving thermal management and system reliability. The extended operating temperature range and compact packaging make it a dependable choice for industrial applications where performance and durability are critical.
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Typical Applications
- DC-DC converters for industrial power supplies, enhancing efficiency and thermal performance in compact power modules.
- Motor drive circuits requiring high current handling and fast switching to optimize torque control and energy use.
- Load switching in automotive electronics, ensuring reliable operation in fluctuating temperature environments.
- Power management in telecommunications infrastructure for stable voltage regulation and low power dissipation.
MX80D04PZ1A Brand Info
The MX80D04PZ1A is a product from a leading semiconductor manufacturer recognized for delivering reliable, high-efficiency power devices. This MOSFET line is engineered to meet rigorous industrial standards, providing robust performance in power conversion and management applications. The device reflects the brand??s commitment to innovation and quality, ensuring compatibility with modern electronic systems and simplifying integration for design engineers.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The maximum drain-source voltage is rated at 40 V, which makes it suitable for medium-voltage power management and switching applications commonly found in industrial and automotive environments.
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How does the low on-resistance benefit system efficiency?
Low on-resistance reduces conduction losses when the device is turned on, which decreases heat generation and improves overall energy efficiency. This enables smaller heat sinks and enhances system reliability.
What package type does this device use, and why is it important?
The device comes in a Power SO-8 package, which supports effective thermal dissipation and provides a compact footprint. This helps engineers design space-efficient PC




