STGIB20M60TS-L Infineon IGBT Transistor 600V 20A TO-247 Package

STGIB20M60TS-L Overview

The STGIB20M60TS-L is a high-performance silicon carbide (SiC) MOSFET designed for efficient power switching in demanding industrial environments. Offering a voltage rating of 600 V and a continuous current capability of 20 A, this device supports high-frequency operation with low switching losses. Its robust design ensures reliable performance in power conversion, motor control, and renewable energy applications, where efficiency and thermal management are critical. The device??s low gate charge and optimized R_DS(on) contribute to improved system efficiency and reduced heat dissipation. Available in a compact and thermally efficient package, it simplifies integration in power modules. For detailed technical support and sourcing, visit IC Manufacturer.

STGIB20M60TS-L Technical Specifications

STGIB20M60TS-L Key Features

• Silicon Carbide MOSFET Technology: Enables high voltage blocking with low conduction and switching losses, improving overall power efficiency in industrial converters.
• Low R_DS(on) of 60 m??: Minimizes conduction losses, leading to better thermal performance and extended device lifespan under continuous operation.
• Wide Operating Temperature Range: Supports junction temperatures up to 175??C, ensuring reliable performance in harsh environments and reducing cooling requirements.
• Robust Gate Drive Tolerance: ??20 V maximum gate-source voltage provides flexibility in gate driving circuits while protecting device integrity.

Typical Applications

• High-efficiency power supplies and DC-DC converters requiring fast switching and low power losses in industrial automation systems.
• Motor drives and inverters that benefit from the device??s high current handling and thermal stability for reliable continuous operation.
• Renewable energy systems such as photovoltaic inverters and battery management units, where efficiency and durability are paramount.
• Electric vehicle onboard chargers and auxiliary power units, leveraging the compact package and high switching speed for space-constrained designs.

STGIB20M60TS-L Advantages vs Typical Alternatives

This silicon carbide MOSFET offers significant advantages over traditional silicon devices, primarily through its lower conduction and switching losses, resulting in higher efficiency and reduced thermal stress. Its high voltage rating and robust gate voltage tolerance enhance system reliability, while the wide operating temperature range allows extended use in demanding industrial conditions. These features combine to reduce cooling needs and improve overall system integration, making it a superior choice compared to standard silicon IGBTs or MOSFETs.

STGIB20M60TS-L Brand Info

The STGIB20M60TS-L is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in advanced power semiconductors, including silicon carbide technology, to meet the evolving demands of industrial, automotive, and energy markets. This device reflects ST??s commitment to innovation, high reliability, and efficiency, delivering components that support next-generation power management and conversion applications.

FAQ

What is the maximum operating voltage of the STGIB20M60TS-L?

The device