STGIPN3H60AT IGBT Module 3-Phase Inverter 600V 30A – SEMIKRON SEMIPACK 3 Package

STGIPN3H60AT Overview

The STGIPN3H60AT is a high-performance 600 V IGBT module designed for industrial power electronics applications. It integrates advanced insulated-gate bipolar transistor (IGBT) technology with a fast recovery diode to deliver efficient switching and robust conduction capabilities. This module is optimized for use in inverter circuits, motor drives, and power supply systems, providing high reliability and thermal performance. Its compact design ensures easy integration into various power conversion systems, making it a preferred choice for engineers seeking durability and efficiency. For detailed product support and purchasing information, visit IC Manufacturer.

STGIPN3H60AT Technical Specifications

STGIPN3H60AT Key Features

• 600 V blocking voltage: Enables operation in medium-voltage industrial environments with reliable performance.
• Low collector-emitter saturation voltage: Minimizes conduction losses for improved energy efficiency in power conversion.
• Fast switching times: Reduces switching losses and enhances overall system efficiency in high-frequency applications.
• Robust thermal design: Supports junction temperatures up to 150??C, ensuring reliable operation under demanding conditions.
• Integrated fast recovery diode: Improves reverse recovery characteristics, enhancing the module??s suitability for inverter and motor drive circuits.
• Compact TO-220 package: Allows easy mounting and thermal management in space-constrained designs.

Typical Applications

• Industrial motor drives where efficient switching and thermal robustness are critical for sustained operation and power control.
• Inverter circuits converting DC to AC power in renewable energy systems such as solar inverters and battery storage.
• Switch-mode power supplies requiring high-voltage tolerance and fast switching capabilities to maximize efficiency.
• Uninterruptible power supplies (UPS) that demand reliable IGBT modules for seamless power backup and conversion.

STGIPN3H60AT Advantages vs Typical Alternatives

This IGBT module delivers enhanced switching performance and lower conduction losses compared to typical alternatives, improving overall system efficiency. Its high isolation voltage and thermal tolerance make it more reliable in harsh industrial environments. The integrated fast recovery diode further reduces switching losses and electromagnetic interference, providing a compact and effective solution for power electronics engineers seeking robust and efficient semiconductor devices.

STGIPN3H60AT Brand Info

Manufactured by STMicroelectronics, the STGIPN3H60AT is part of their extensive portfolio of power semiconductor devices. STMicroelectronics is a global leader in semiconductor solutions, known for innovation and quality in industrial and automotive markets. This product embodies ST??s commitment to delivering high-performance power modules that support energy-efficient and reliable industrial systems worldwide. The STGIPN3H60AT benefits from ST??s rigorous manufacturing standards and comprehensive technical support.

FAQ

What is the maximum junction temperature for the STGIPN3H60AT?

The maximum operating junction temperature of this module is 150??C. This high-temperature tolerance ensures reliable performance in demanding industrial environments and supports effective thermal management strategies.

Can this module be used in high-frequency inverter applications?

Yes, the fast switching times with typical turn-on and turn-off times of 150 ns and 300 ns respectively make it suitable for high-frequency inverter applications, reducing switching losses and improving overall efficiency.